Boampong Amos Amoako, Cho Jae-Hyeok, Choi Yoonseuk, Kim Min-Hoi
Department of Electronic Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1766-1771. doi: 10.1166/jnn.2021.18923.
We demonstrated the enhancement of the retention characteristics in solution-processed ferroelectric memory transistors. For enhanced retention characteristics, solution-processed Indium Gallium Zinc Oxide (InGaZnO) semiconductor is used as an active layer in a dual-gate structure to achieve high memory on-current and low memory off-current respectively. In our dual-gate oxide ferroelectric thin-film transistor (DG Ox-FeTFT), while conventional TFT characteristic is observed during bottom-gate sweeping, large hysteresis is exhibited during top-gate sweeping with high memory on-current due to the high mobility of the InGaZnO. The voltage applied to the counter bottom-gate electrode causes variations in the turn-on voltage position, which controlled the memory on- and off-current in retention characteristics. Specifically, due to the full depletion of semiconductor by the high negative counter gate bias, the memory off-current in reading operation is dramatically reduced by 10⁴. The application of a high negative counter field to the dual-gate solution-processed ferroelectric memory gives a high memory on- and off-current ratio useful for the production of high performance multi-bit memory devices.
我们展示了溶液处理的铁电存储晶体管中保持特性的增强。为了增强保持特性，溶液处理的铟镓锌氧化物（InGaZnO）半导体被用作双栅结构中的有源层，分别实现高存储导通电流和低存储截止电流。在我们的双栅氧化物铁电薄膜晶体管（DG Ox-FeTFT）中，在底栅扫描期间观察到传统的TFT特性，而在顶栅扫描期间，由于InGaZnO的高迁移率，表现出大的滞后现象以及高存储导通电流。施加到相对底栅电极的电压会导致开启电压位置发生变化，从而在保持特性中控制存储导通电流和截止电流。具体而言，由于高负相对栅极偏压使半导体完全耗尽，读取操作中的存储截止电流显著降低了10⁴。向双栅溶液处理的铁电存储器施加高负相对场可得到高存储导通电流与截止电流比，这对于生产高性能多位存储器件很有用。
