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电场和带电杂质掺杂对β-硼烯肖特基异常的影响。

Electric field and charged impurity doping effects on the Schottky anomaly of β-borophene.

作者信息

Hoi Bui D, Tung Luong V, Vinh Pham T, Khoa Doan Q, T T Phuong Le

机构信息

Department of Physics, University of Education, Hue University, Hue City, Vietnam.

出版信息

Phys Chem Chem Phys. 2021 Jan 28;23(3):2080-2087. doi: 10.1039/d0cp05219a.

DOI:10.1039/d0cp05219a
PMID:33434258
Abstract

Due to the coexistence of Dirac and triplet fermions, monolayer β12-borophene has recently attracted both experimental and theoretical researchers. In particular, various phase transitions have been recently reported in the structure, in the presence of dilute charged impurity and a perpendicular electric field, leading to interesting electronic heat capacity (HC). In this paper, we systematically examine the effects of charged impurity doping and electric field on the HC of monolayer β12-borophene. To do this, we utilize the five-band tight-binding Hamiltonian model, the Green's function, T-matrix, and the Born approximation for different models considering the substrate effects. Numerical analysis reveals that the inversion symmetric model is the proper model in the pristine and perturbed metallic β12-borophene, leading to a regular reduction of HC with both charged impurity and electric field. Moreover, the pristine and perturbed Schottky anomaly alterations are fully addressed. Unforeseeably, HC irregularly fluctuates with impurity in the homogeneous model. We believe that our results provide new physical insights into the thermal properties of monolayer β12-borophene.

摘要

由于狄拉克费米子和三重态费米子的共存,单层β12-硼烯最近吸引了实验和理论研究人员的关注。特别是,最近报道了在存在稀带电杂质和垂直电场的情况下,该结构中发生了各种相变,从而导致了有趣的电子热容量(HC)。在本文中,我们系统地研究了带电杂质掺杂和电场对单层β12-硼烯热容量的影响。为此,我们利用五带紧束缚哈密顿模型、格林函数、T矩阵以及考虑衬底效应的不同模型的玻恩近似。数值分析表明,反演对称模型适用于原始和受扰的金属β12-硼烯,导致热容量随带电杂质和电场的增加而有规律地降低。此外,还全面探讨了原始和受扰的肖特基异常变化。出乎意料的是,在均匀模型中,热容量随杂质不规则地波动。我们相信,我们的结果为单层β12-硼烯的热性质提供了新的物理见解。

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Electric field and charged impurity doping effects on the Schottky anomaly of β-borophene.电场和带电杂质掺杂对β-硼烯肖特基异常的影响。
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