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用于高能纳秒调Q脉冲产生的硒化铟饱和吸收体。

Indium selenide saturable absorber for high-energy nanosecond Q-switched pulse generation.

作者信息

Li Lu, Wang Yao, Jin Wei, Zhao Qiyi, Su Yulong

出版信息

Appl Opt. 2021 Jan 10;60(2):427-432. doi: 10.1364/AO.414750.

Abstract

As a kind of III/VI group compound 2D layered material, indium selenide () has attracted tremendous interest because of its favorable optoelectronic characteristics. Here, magnetron sputtering deposition (MSD) technology was employed to prepare an -based saturable absorber (SA). The nonlinear optical properties of this SA, whose modulation depth () is 6.18%, were studied. With the aid of its saturable absorption, a stable two-wavelength -switching Er-doped fiber (EDF) laser was established. When pump power was adjusted to 900 mW, the output power was increased to 63.84 mW. The shortest pulse duration and maximum pulse energy were estimated to be 556 ns and 376 nJ, respectively. The signal-to-noise ratio of 70 dB proves this fiber laser has high stability. In comparison with previous works, the laser performance in this study is improved significantly. These results indicate that the holds promise as an outstanding candidate for high-energy pulse generation and will advance the development of -based nonlinear photonics devices.

摘要

作为一种III/VI族化合物二维层状材料,硒化铟()因其良好的光电特性而引起了极大的关注。在此,采用磁控溅射沉积(MSD)技术制备了基于的可饱和吸收体(SA)。研究了该SA的非线性光学特性,其调制深度()为6.18%。借助其可饱和吸收特性,建立了稳定的双波长开关掺铒光纤(EDF)激光器。当泵浦功率调至900 mW时,输出功率增至63.84 mW。最短脉冲持续时间和最大脉冲能量估计分别为556 ns和376 nJ。70 dB的信噪比证明该光纤激光器具有高稳定性。与先前的工作相比,本研究中的激光性能有显著提高。这些结果表明,有望成为高能脉冲产生的优秀候选材料,并将推动基于的非线性光子学器件的发展。

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