Zou Zheng-Yu, Song Xiao-Qiang, Jiang Lei, Yuan Chang-Lai, Lu Wen-Zhong, Hu Yong-Ming, Lei Wen
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
Hubei Key Laboratory of Ferro-Piezoelectric Materials and Devices, Hubei University, Wuhan, 430074, P. R. China.
Chemistry. 2021 Apr 1;27(19):5992-5998. doi: 10.1002/chem.202005170. Epub 2021 Mar 4.
BaZnSi O ceramic was prepared by the conventional solid-state method and sintered at 1100 °C. XRD and synchrotron Rietveld refinement analyses revealed the BaZnSi O ceramic presented a monoclinic structure with a space group of P2 /a (No.14), which is reported for the first time. The BaZnSi O ceramic presented a weak ferroelectricity, which was confirmed by the P-E loop and the 90° nanoscale ferroelectric domain. Although ϵ -T displayed two ϵ abnormal peaks at 400 °C and 460 °C, the Curie temperature (T ) was located at 460 °C according to the dielectric loss and Curie-Weiss law. Moreover, the BaZnSi O ceramic exhibited optimized microwave dielectric properties with ϵ =6.55, Q×f=52400 GHz, and τ =-24.5 ppm/°C. Hence, the BaZnSi O ceramic in the ternary BaO-ZnO-SiO system possessed both weak ferroelectricity and microwave dielectric properties. These results are expected to break the technical barrier of ferroelectric phase shifter applications in microwave and even millimeter-wave frequency bands.
