Antonets I V, Golubev Ye A, Shcheglov V I
Syktyvkar State University, Syktyvkar, Russia.
Institute of Geology of Komi SC UrB RAS, Syktyvkar, Russia.
Ultramicroscopy. 2021 Mar;222:113212. doi: 10.1016/j.ultramic.2021.113212. Epub 2021 Jan 16.
The determination of the content of the conducting phase and the assessment of conductivity by microscopic images are interesting for rapid and non-destructive analysis of the electrophysical properties of two-phase (conductor/dielectric) samples during the atomic force microscopy. In this paper we summarized results of the analysis of the conductivity maps of the shungite surface by the method of discretization by applying a square grid with subsequent binary digital processing. Microstructure and conductivity were evaluated by measuring the average length of continuous conductive circuits isolated on the grid. A model was considered that established a unique correspondence (up to normalizing coefficients) between the length of the conductive circuits on the conductivity maps and the integral conductivity of the sample as a whole. An analytical equation was obtained that described such dependence with an accuracy of units of percent. We proposed a method for measuring the integral conductivity of a shungite samples based on an analysis of its binary conductivity map obtained by spreading resistance microscopy. This method can be used to determine the conductivity by surface conductivity mapping for shungite-like two-phase conductor/dielectric systems, and in general, for any two-phase substances where the phases differ in AFM-determined properties.
在原子力显微镜观察过程中，通过微观图像确定导电相的含量并评估电导率，对于快速且无损地分析两相（导体/电介质）样品的电物理性质而言是很有意义的。在本文中，我们总结了通过应用方形网格进行离散化并随后进行二进制数字处理的方法，对碳硅石表面电导率图的分析结果。通过测量在网格上分离出的连续导电回路的平均长度来评估微观结构和电导率。考虑了一个模型，该模型在电导率图上的导电回路长度与整个样品的积分电导率之间建立了唯一对应关系（直至归一化系数）。得到了一个解析方程，该方程以百分比单位的精度描述了这种依赖关系。我们提出了一种基于对通过扩展电阻显微镜获得的碳硅石样品的二进制电导率图进行分析来测量其积分电导率的方法。该方法可用于通过表面电导率映射来确定类碳硅石两相导体/电介质系统的电导率，并且一般而言，可用于任何在原子力显微镜确定的性质方面存在差异的两相物质。
