Tripathi Manoj, Lee Frank, Michail Antonios, Anestopoulos Dimitris, McHugh James G, Ogilvie Sean P, Large Matthew J, Graf Aline Amorim, Lynch Peter J, Parthenios John, Papagelis Konstantinos, Roy Soumyabrata, Saadi M A S R, Rahman Muhammad M, Pugno Nicola Maria, King Alice A K, Ajayan Pulickel M, Dalton Alan B
Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, United Kingdom.
Department of Physics, University of Patras, Patras GR26504, Greece.
ACS Nano. 2021 Feb 23;15(2):2520-2531. doi: 10.1021/acsnano.0c06701. Epub 2021 Jan 25.
Two-dimensional materials such as graphene and molybdenum disulfide are often subject to out-of-plane deformation, but its influence on electronic and nanomechanical properties remains poorly understood. These physical distortions modulate important properties which can be studied by atomic force microscopy and Raman spectroscopic mapping. Herein, we have identified and investigated different geometries of line defects in graphene and molybdenum disulfide such as standing collapsed wrinkles, folded wrinkles, and grain boundaries that exhibit distinct strain and doping. In addition, we apply nanomechanical atomic force microscopy to determine the influence of these defects on local stiffness. For wrinkles of similar height, the stiffness of graphene was found to be higher than that of molybdenum disulfide by 10-15% due to stronger in-plane covalent bonding. Interestingly, deflated graphene nanobubbles exhibited entirely different characteristics from wrinkles and exhibit the lowest stiffness of all graphene defects. Density functional theory reveals alteration of the bandstructures of graphene and MoS due to the wrinkled structure; such modulation is higher in MoS compared to graphene. Using this approach, we can ascertain that wrinkles are subject to significant strain but minimal doping, while edges show significant doping and minimal strain. Furthermore, defects in graphene predominantly show compressive strain and increased carrier density. Defects in molybdenum disulfide predominantly show tensile strain and reduced carrier density, with increasing tensile strain minimizing doping across all defects in both materials. The present work provides critical fundamental insights into the electronic and nanomechanical influence of intrinsic structural defects at the nanoscale, which will be valuable in straintronic device engineering.
诸如石墨烯和二硫化钼之类的二维材料常常会发生面外变形,但其对电子和纳米力学性能的影响仍知之甚少。这些物理畸变会调节重要性能,而这些性能可通过原子力显微镜和拉曼光谱映射来研究。在此,我们识别并研究了石墨烯和二硫化钼中线缺陷的不同几何形状,例如直立塌陷褶皱、折叠褶皱以及呈现出不同应变和掺杂的晶界。此外,我们应用纳米力学原子力显微镜来确定这些缺陷对局部刚度的影响。对于高度相似的褶皱,由于更强的面内共价键,发现石墨烯的刚度比二硫化钼高10 - 15%。有趣的是,瘪塌的石墨烯纳米气泡表现出与褶皱完全不同的特性,并且在所有石墨烯缺陷中刚度最低。密度泛函理论揭示了由于褶皱结构导致的石墨烯和二硫化钼能带结构的改变;与石墨烯相比,二硫化钼中的这种调制更高。使用这种方法,我们可以确定褶皱承受显著应变但掺杂极小,而边缘显示出显著掺杂且应变极小。此外,石墨烯中的缺陷主要表现为压缩应变和载流子密度增加。二硫化钼中的缺陷主要表现为拉伸应变和载流子密度降低,随着拉伸应变增加,两种材料中所有缺陷的掺杂都降至最低。本工作为纳米尺度上本征结构缺陷的电子和纳米力学影响提供了关键的基础见解,这在应变电子器件工程中将具有重要价值。