Improved photocatalytic oxidation of arsenic (III) with WO/TiO nanomaterials synthesized by the sol-gel method.

Photocatalytic oxidation of arsenite (As(III)) to arsenate (As(V)) was studied in aqueous solution using a series of WO/TiO semiconductors readily synthesized through sol-gel method with WO content in the range of 1-5 wt%. The resulting materials showed enhanced photocatalytic activity towards As(III) photo-oxidation compared to their individual counterparts under UV radiation. The amount of As(III) and As(V) species in the irradiated solution was determined using the molybdenum blue method. The efficiency of photoinduced carriers separation was further affirmed by electrical impedance spectroscopy (EIS) and photocurrent tests. The maximum catalytic efficiency was observed when the binary oxide 3%WO/TiO (TW3) was used, reaching a 99% conversion of As(III) to As(V) within the first 25 min under UV irradiation. The enhanced photocatalytic performance of the heterostructures could be explained as consequent to an improved charge separation due to the migration of photoproduced holes in TW3 photocatalyst. Based on the electric band structure of WO and TiO, a reasonable mechanism for the photo-oxidation of As(III) over TW3 novel catalyst has been proposed.