Mohmad Abdul Rahman, Hamzah Azrul Azlan, Yang Jieun, Wang Yan, Bozkurt Ibrahim, Shin Hyeon Suk, Jeong Hu Young, Chhowalla Manish
Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi, Malaysia.
Faraday Discuss. 2021 Apr 1;227:332-340. doi: 10.1039/c9fd00132h. Epub 2021 Feb 1.
In this work, we report the synthesis and characterization of mixed phase NbS nanoflakes prepared by chemical vapor deposition. The as-grown samples show a high density of flakes (thickness ∼50 nm) that form a continuous film. Raman and X-ray diffraction data show that the samples consist of both 2H and 3R phases, with the 2H phase containing a high concentration of Nb interstitials. These Nb interstitials sit in between the NbS layers to form NbS. Cross-sectional Energy Dispersive Spectroscopy analysis with transmission electron microscopy suggests that the 2H NbS region is found in thinner flakes, while 3R NbS is observed in thicker regions of the films. The evolution of the phase from 2H NbS to 3R NbS may be attributed to the change of the growth environment from Nb-rich at the start of the growth to sulfur-rich at the latter stage. It was also found that the incorporation of Nb interstitials is highly dependent on the temperature of the NbCl precursor and the position of the substrate in the furnace. Samples grown at high NbCl temperature and with substrate located closer to the NbCl source show higher incorporation of Nb interstitials. Electrical measurements show linear I-V characteristics, indicating the metallic nature of the NbS film with relatively low resistivity of 4.1 × 10Ω cm.
在本工作中,我们报道了通过化学气相沉积制备的混合相NbS纳米片的合成与表征。生长后的样品显示出高密度的薄片(厚度约50nm),这些薄片形成了连续的薄膜。拉曼光谱和X射线衍射数据表明,样品由2H和3R相组成,其中2H相含有高浓度的Nb间隙原子。这些Nb间隙原子位于NbS层之间形成NbS。透射电子显微镜的横截面能量色散光谱分析表明,在较薄的薄片中发现了2H NbS区域,而在薄膜较厚的区域观察到了3R NbS。相从2H NbS到3R NbS的演变可能归因于生长环境从生长开始时的富Nb到后期的富硫的变化。还发现,Nb间隙原子的掺入高度依赖于NbCl前驱体的温度和衬底在炉中的位置。在高NbCl温度下生长且衬底位置更靠近NbCl源的样品显示出更高的Nb间隙原子掺入量。电学测量显示出线性的I-V特性,表明NbS薄膜具有金属性质,电阻率相对较低,为4.1×10Ω·cm。