Wang Xinhua, Zhang Yange, Huang Sen, Yin Haibo, Fan Jie, Wei Ke, Zheng Yingkui, Wang Wenwu, Jiang Haojie, Wu Xuebang, Wang Xianping, Liu Changsong, Liu Xinyu
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7725-7734. doi: 10.1021/acsami.0c19483. Epub 2021 Feb 2.
The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiN grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of SiNO was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energy-activated GaO on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML θ-GaO transition interface was inserted into SiNO/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.
基于通过X射线光电子能谱进行的高分辨率溅射深度剖析分析所检测到的反应物和产物的化学成分，分析了通过低压化学气相沉积生长的GaN和SiN界面处部分结晶超薄层的形成机制。从反应吉布斯自由能变化的可行性分析出发，提出了一个合理的SiNO形成质量作用方程。表面上的高能活化GaO可能有助于结晶成分的合成。在SiNO/GaN纯界面超晶胞平板中插入一个定义明确的1ML θ-GaO过渡界面，以编辑键的不饱和状态。当不饱和原子的有效电荷调整到一定区间时，可以实现低密度状态。
