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等离子体辅助还原氧化石墨烯薄膜

Plasma Assisted Reduction of Graphene Oxide Films.

作者信息

Vinoth Kumar Sri Hari Bharath, Muydinov Ruslan, Szyszka Bernd

机构信息

Institute of High-Frequency and Semiconductor System Technologies, Technische Universität Berlin, HFT 5-2, Einsteinufer 25, 10587 Berlin, Germany.

出版信息

Nanomaterials (Basel). 2021 Feb 3;11(2):382. doi: 10.3390/nano11020382.

Abstract

The past decade has seen enormous efforts in the investigation and development of reduced graphene oxide (GO) and its applications. Reduced graphene oxide (rGO) derived from GO is known to have relatively inferior electronic characteristics when compared to pristine graphene. Yet, it has its significance attributed to high-yield production from inexpensive graphite, ease of fabrication with solution processing, and thus a high potential for large-scale applications and commercialization. Amongst several available approaches for GO reduction, the mature use of plasma technologies is noteworthy. Plasma technologies credited with unique merits are well established in the field of nanotechnology and find applications across several fields. The use of plasma techniques for GO development could speed up the pathway to commercialization. In this report, we review the state-of-the-art status of plasma techniques used for the reduction of GO-films. The strength of various techniques is highlighted with a summary of the main findings in the literature. An analysis is included through the prism of chemistry and plasma physics.

摘要

在过去十年中,人们在还原氧化石墨烯(GO)的研究、开发及其应用方面付出了巨大努力。与原始石墨烯相比,由GO衍生而来的还原氧化石墨烯(rGO)的电子特性相对较差。然而,它具有重要意义,这归因于其可从廉价石墨中高产率制备、易于通过溶液加工进行制造,因此具有大规模应用和商业化的巨大潜力。在几种可用的GO还原方法中,等离子体技术的成熟应用值得关注。具有独特优点的等离子体技术在纳米技术领域已得到充分确立,并在多个领域得到应用。使用等离子体技术进行GO的开发可以加快商业化进程。在本报告中,我们回顾了用于还原GO薄膜的等离子体技术的最新状态。通过总结文献中的主要发现,突出了各种技术的优势。并从化学和等离子体物理学的角度进行了分析。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e2ff/7913195/5c8d79c9bec4/nanomaterials-11-00382-g008.jpg

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