Borodaenko Yulia, Gurbatov Stanislav, Tutov Mikhail, Zhizhchenko Alexey, Kulinich Sergei A, Kuchmizhak Aleksandr, Mironenko Aleksandr
Far Eastern Federal University, 690091 Vladivostok, Russia.
Institute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, Russia.
Nanomaterials (Basel). 2021 Feb 4;11(2):401. doi: 10.3390/nano11020401.
Here, we present the single-step laser-assisted fabrication of anti-reflective hierarchical surface textures on silicon locally functionalized with a photoluminescent (PL) molecular nanolayer. Using femtosecond-laser ablation of commercial crystalline Si wafers placed under a layer of a solution containing rhodamine 6G (R6G) a triethoxysilyl derivative, we fabricated ordered arrays of microconical protrusions with self-organized nanoscale surface morphology. At the same time, the laser-induced temperature increase facilitated surface activation and local binding of the R6G derivative to the as-fabricated nanotextured surface. The produced dual-scale surface textures showed remarkable broadband (visible to near-IR) light-absorbing properties with an averaged reflectivity of around 1%, and the capping molecular nanolayer demonstrated a strongly enhanced PL yield. By performing a pH sensing test using the produced nanotextured substrate, we confirmed the retention of sensory properties of the molecules attached to the surface and validated the potential applicability of the high-performing liquid-assisted laser processing as a key technology for the development of innovative multifunctional sensing devices in which the textured substrate (e.g., ultra-black semiconductor) plays a dual role as a support and PL signal amplifier.
在此,我们展示了在通过光致发光(PL)分子纳米层进行局部功能化的硅上,一步法激光辅助制备抗反射分级表面纹理。利用飞秒激光烧蚀置于含有罗丹明6G(R6G,一种三乙氧基硅烷基衍生物)的溶液层下方的商用晶体硅晶片,我们制备了具有自组织纳米级表面形态的微锥形突起有序阵列。同时,激光诱导的温度升高促进了表面活化以及R6G衍生物与所制备的纳米纹理表面的局部结合。所产生的双尺度表面纹理表现出显著的宽带(可见光至近红外)光吸收特性,平均反射率约为1%,并且覆盖分子纳米层表现出大大增强的PL产率。通过使用所制备的纳米纹理基板进行pH传感测试,我们证实了附着在表面的分子的传感特性得以保留,并验证了高性能液体辅助激光加工作为开发创新多功能传感设备的关键技术的潜在适用性,在该设备中,纹理基板(例如超黑半导体)作为支撑体和PL信号放大器发挥双重作用。