Huang Kai, Huang Xiaohang, Nogami Jun
Chemistry Program, Guangdong Technion Israel Institute of Technology, 241 Daxue Road, Shantou, Guangdong Province 515603, China.
Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada.
Phys Chem Chem Phys. 2021 Feb 25;23(7):4161-4166. doi: 10.1039/d0cp06353c.
We examined the dynamics of adsorption and the subsequent growth of submonolayered silver on Si(001) from 100 K to 230 K, using scanning tunneling microscopy and density functional theory. The dynamics is demonstrated to depend on substrate temperature, as described in the following three stages: (I) at 100-140 K, silver is adsorbed as isolated aggregates (regular-Ag4, variant-Ag4 and Ag2), in the absence of single silver adatoms. The spontaneous formation of silver aggregates arises from the hot-atom motion upon the initial impingement of individual silver atoms onto the Si(001) substrate. (II) At 140-190 K, the migration of isolated Ag-aggregates is sufficiently activated, leading to the formation of Ag-chains by surface polymerization. (III) At 190-230 K, there is implication that the Ag-chains become mobile on Si(001), en route to forming patches of 2×2 Ag-films by agglomeration.
我们使用扫描隧道显微镜和密度泛函理论,研究了在100 K至230 K温度范围内,亚单层银在Si(001)上的吸附动力学及后续生长过程。结果表明,动力学过程取决于衬底温度,具体可分为以下三个阶段:(I)在100 - 140 K时,银以孤立聚集体(规则 - Ag4、变体 - Ag4和Ag2)的形式吸附,不存在单个银吸附原子。银聚集体的自发形成源于单个银原子最初撞击Si(001)衬底时的热原子运动。(II)在140 - 190 K时,孤立的银聚集体迁移得到充分激活,通过表面聚合形成银链。(III)在190 - 230 K时,有迹象表明银链在Si(001)上变得可移动,通过团聚形成2×2银膜斑块。