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电压依赖性阴离子通道的内在无序N端

The intrinsically disordered N-terminus of the voltage-dependent anion channel.

作者信息

Preto Jordane, Krimm Isabelle

机构信息

Université Claude Bernard Lyon 1, Centre de Recherche en Cancérologie de Lyon, Centre Léon Bérard, INSERM 1052, CNRS 5286, Lyon, France.

CRMN, UMR CNRS 5082, ENS de Lyon, Université Lyon 1, Villeurbanne, France.

出版信息

PLoS Comput Biol. 2021 Feb 12;17(2):e1008750. doi: 10.1371/journal.pcbi.1008750. eCollection 2021 Feb.

DOI:10.1371/journal.pcbi.1008750
PMID:33577583
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7906469/
Abstract

The voltage-dependent anion channel (VDAC) is a critical β-barrel membrane protein of the mitochondrial outer membrane, which regulates the transport of ions and ATP between mitochondria and the cytoplasm. In addition, VDAC plays a central role in the control of apoptosis and is therefore of great interest in both cancer and neurodegenerative diseases. Although not fully understood, it is presumed that the gating mechanism of VDAC is governed by its N-terminal region which, in the open state of the channel, exhibits an α-helical structure positioned midway inside the pore and strongly interacting with the β-barrel wall. In the present work, we performed molecular simulations with a recently developed force field for disordered systems to shed new light on known experimental results, showing that the N-terminus of VDAC is an intrinsically disordered region (IDR). First, simulation of the N-terminal segment as a free peptide highlighted its disordered nature and the importance of using an IDR-specific force field to properly sample its conformational landscape. Secondly, accelerated dynamics simulation of a double cysteine VDAC mutant under applied voltage revealed metastable low conducting states of the channel representative of closed states observed experimentally. Related structures were characterized by partial unfolding and rearrangement of the N-terminal tail, that led to steric hindrance of the pore. Our results indicate that the disordered properties of the N-terminus are crucial to properly account for the gating mechanism of VDAC.

摘要

电压依赖性阴离子通道(VDAC)是线粒体外膜中一种关键的β-桶状膜蛋白,它调节线粒体与细胞质之间的离子和ATP转运。此外,VDAC在细胞凋亡控制中起核心作用,因此在癌症和神经退行性疾病研究中都备受关注。尽管尚未完全了解,但据推测VDAC的门控机制受其N端区域控制,在通道开放状态下,该区域呈现α-螺旋结构,位于孔道中部并与β-桶壁强烈相互作用。在本研究中,我们使用最近开发的针对无序系统的力场进行分子模拟,以揭示已知实验结果的新见解,结果表明VDAC的N端是一个内在无序区域(IDR)。首先,将N端片段模拟为游离肽突出了其无序性质以及使用IDR特异性力场正确采样其构象景观的重要性。其次,对双半胱氨酸VDAC突变体在施加电压下进行加速动力学模拟,揭示了通道的亚稳态低传导状态,这与实验观察到的关闭状态相似。相关结构的特征是N端尾部的部分解折叠和重排,导致孔道的空间位阻。我们的结果表明,N端的无序特性对于正确解释VDAC的门控机制至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/e7fb81874d07/pcbi.1008750.g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/8f7a17a93adb/pcbi.1008750.g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/57e78e7282f0/pcbi.1008750.g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/d18e34383799/pcbi.1008750.g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/560a865bcc51/pcbi.1008750.g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/a36d62f83b3d/pcbi.1008750.g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/4eb5b0a6ed01/pcbi.1008750.g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/e7fb81874d07/pcbi.1008750.g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/8f7a17a93adb/pcbi.1008750.g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/57e78e7282f0/pcbi.1008750.g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/d18e34383799/pcbi.1008750.g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/560a865bcc51/pcbi.1008750.g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/a36d62f83b3d/pcbi.1008750.g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/4eb5b0a6ed01/pcbi.1008750.g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/95e0/7906469/e7fb81874d07/pcbi.1008750.g007.jpg

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