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将 N 端 α 螺旋附着在电压门控阴离子通道的壁上并不会阻止其电压门控。

Affixing N-terminal α-helix to the wall of the voltage-dependent anion channel does not prevent its voltage gating.

机构信息

Program in Physical Biology, Eunice Kennedy Shriver NICHD, National Institutes of Health, Bethesda, Maryland 20892, USA.

出版信息

J Biol Chem. 2012 Mar 30;287(14):11437-45. doi: 10.1074/jbc.M111.314229. Epub 2012 Jan 24.

Abstract

The voltage-dependent anion channel (VDAC) governs the free exchange of ions and metabolites between the mitochondria and the rest of the cell. The three-dimensional structure of VDAC1 reveals a channel formed by 19 β-strands and an N-terminal α-helix located near the midpoint of the pore. The position of this α-helix causes a narrowing of the cavity, but ample space for metabolite passage remains. The participation of the N-terminus of VDAC1 in the voltage-gating process has been well established, but the molecular mechanism continues to be debated; however, the majority of models entail large conformational changes of this N-terminal segment. Here we report that the pore-lining N-terminal α-helix does not undergo independent structural rearrangements during channel gating. We engineered a double Cys mutant in murine VDAC1 that cross-links the α-helix to the wall of the β-barrel pore and reconstituted the modified protein into planar lipid bilayers. The modified murine VDAC1 exhibited typical voltage gating. These results suggest that the N-terminal α-helix is located inside the pore of VDAC in the open state and remains associated with β-strand 11 of the pore wall during voltage gating.

摘要

电压依赖性阴离子通道 (VDAC) 控制着线粒体与细胞其他部分之间离子和代谢物的自由交换。VDAC1 的三维结构揭示了一个由 19 条 β 链和一个位于孔中点附近的 N 端 α 螺旋组成的通道。该 α 螺旋的位置导致腔的变窄,但仍留有足够的代谢物通过的空间。VDAC1 的 N 端参与电压门控过程已经得到很好的确立,但分子机制仍存在争议;然而,大多数模型都需要这个 N 端片段的大构象变化。在这里,我们报告说在通道门控过程中,衬里孔的 N 端 α 螺旋不会经历独立的结构重排。我们设计了一个双 Cys 突变的鼠源 VDAC1,该突变使 α 螺旋交联到 β 桶孔的壁上,并将修饰后的蛋白重新构成平面脂质双层。修饰后的鼠源 VDAC1 表现出典型的电压门控。这些结果表明,在开放状态下,N 端 α 螺旋位于 VDAC 的孔内,并且在电压门控过程中保持与孔壁的 β 链 11 相关联。

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