Lu Zhangbo, Hou Guozhi, Zhu Yu, Chen Jiaming, Xu Jun, Chen Kunji
National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures/Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing, 210093, P. R. China.
Nanoscale. 2021 Feb 25;13(7):4206-4212. doi: 10.1039/d0nr09122g.
A carrier-selective passivating contact is one of the main factors for the preparation of high-efficiency solar cells. In this work, a one-dimensional nanostructured CdS material combined with quasi-metallic TiN exhibits excellent contact performance with n-Si. In addition, the introduction of the CdS nanowire interlayer is more conducive to the extraction and transmission of electrons, which is attributed to a more suitable energy level alignment between the rear contact and the n-Si absorption layer. As a result, the power conversion efficiency of organic/Si solar cells based on the CdS NW/TiN/Al electron selective passivating contact exceeds 14.0%. This shows a promising technique to achieve high-performance and low-cost photovoltaic devices.
载流子选择性钝化接触是制备高效太阳能电池的主要因素之一。在这项工作中，一维纳米结构的硫化镉（CdS）材料与准金属氮化钛（TiN）相结合，与n型硅（n-Si）表现出优异的接触性能。此外，硫化镉纳米线中间层的引入更有利于电子的提取和传输，这归因于背接触与n型硅吸收层之间更合适的能级对准。结果，基于硫化镉纳米线/氮化钛/铝（CdS NW/TiN/Al）电子选择性钝化接触的有机/硅太阳能电池的功率转换效率超过14.0%。这表明了一种实现高性能和低成本光伏器件的有前景的技术。
