伽马 H2AX 技术显示，暴露于 50Hz 极低频磁场不会引起细胞内 DNA 损伤。
Exposure to 50 Hz Extremely-Low-Frequency Magnetic Fields Induces No DNA Damage in Cells by Gamma H2AX Technology.
机构信息
Hangzhou Center for Disease Control and Prevention, Mingshi Road, Hangzhou City, 310021 Zhejiang Province, China.
Institute of Cognitive Neuroscience and Department of Psychology, Zhejiang Sci-Tech University, Hangzhou City, 310018 Zhejiang Province, China.
出版信息
Biomed Res Int. 2021 Feb 15;2021:8510315. doi: 10.1155/2021/8510315. eCollection 2021.
The current results for extremely-low-frequency magnetic fields (ELF-MF) on DNA damage are still debated. A sensitive indicator and systematic research are needed to assess the effects of ELF-MF. In this study, we used H2AX as an early and sensitive molecular marker to evaluate the DNA damage effects of ELF-MF in vitro. Human amnion epithelial cells (FLs), human skin fibroblast cells (HSFs), and human umbilical vein endothelial cells (HUVECs) were exposed to 50 Hz ELF-MF at 0.4, 1, and 2 mT for 15 min, 1 h, and 24 h, respectively. After exposure, cells were subjected to H2AX immunofluorescence and western blot. The results showed no significant difference in the average number of foci per cell, the percentage of H2AX foci-positive cells, or the expression of H2AX between the sham and 50 Hz ELF-MF exposure groups ( > 0.05). In conclusion, 50 Hz ELF-MF did not induce DNA damage in FLs, HSFs, or HUVECs, which was independent of the intensity or duration of the exposure.
目前关于极低频磁场（ELF-MF）对 DNA 损伤的研究结果仍存在争议。需要使用敏感的指标和系统的研究来评估 ELF-MF 的影响。在本研究中，我们使用 H2AX 作为早期和敏感的分子标志物来评估 ELF-MF 在体外对 DNA 损伤的影响。将人羊膜上皮细胞（FLs）、人皮肤成纤维细胞（HSFs）和人脐静脉内皮细胞（HUVECs）分别暴露于 50 Hz 的 ELF-MF 中，强度分别为 0.4、1 和 2 mT，时间分别为 15 min、1 h 和 24 h。暴露后，对细胞进行 H2AX 免疫荧光和 Western blot 检测。结果显示，在假暴露组和 50 Hz ELF-MF 暴露组之间，细胞内平均焦点数量、H2AX 焦点阳性细胞的百分比或 H2AX 的表达均无显著差异（>0.05）。综上所述，50 Hz ELF-MF 不会诱导 FLs、HSFs 或 HUVECs 发生 DNA 损伤，其效应与暴露的强度或时间无关。
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