Li Xinlei
MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, People's Republic of China.
Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, People's Republic of China.
Nanotechnology. 2021 Mar 11;32(22). doi: 10.1088/1361-6528/abe9e5.
Nanoholes obtained by droplet epitaxy has been intensively investigated as an important material platform for the fabrication of nanodevices due to their unique topology. However, the final fabricated nanoholes are very difficult to achieve a highly symmetric circular structure, and usually have two or four gaps in the sidewall of the holes. Here we have presented a developed model to inquire into the reasons for the formation of the gaps at the periphery of nanoholes and discuss how to improve the structural symmetry of the nanoholes. It is found that the anisotropic interface diffusion of As atoms decomposed by substrate can result in the formation of the gaps. In order to improve the symmetry of final nanostructures, we can minimize the interval time between deposition of Ga droplets and open operation of As flux, and set up a multistep growth procedure by changing the intensity of As flux or growth temperature.
由于其独特的拓扑结构，通过液滴外延获得的纳米孔作为制造纳米器件的重要材料平台受到了广泛研究。然而，最终制造的纳米孔很难实现高度对称的圆形结构，并且通常在孔的侧壁上有两个或四个间隙。在这里，我们提出了一个改进的模型来探究纳米孔周边间隙形成的原因，并讨论如何提高纳米孔的结构对称性。研究发现，由衬底分解的As原子的各向异性界面扩散会导致间隙的形成。为了提高最终纳米结构的对称性，我们可以尽量缩短Ga液滴沉积和As通量开启操作之间的间隔时间，并通过改变As通量强度或生长温度建立多步生长程序。
