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通过缺陷工程控制LaFeO₃/SrTiO₃界面处的输运性质。

Controlling transport properties at LaFeO/SrTiOinterfaces by defect engineering.

作者信息

Butt Mehwish Khalid, Zeeshan Hafiz Muhammad, Zhao Yang, Wang Shuanhu, Jin Kexin

机构信息

Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China.

出版信息

J Phys Condens Matter. 2021 May 13;33(24). doi: 10.1088/1361-648X/abea40.

DOI:10.1088/1361-648X/abea40
PMID:33636709
Abstract

The formation of conductive LaFeO/SrTiOinterfaces is first time reported by pulsed laser deposition via controlling the defects of SrTiO, which are closely related to the surface of substrate. It is found that the interfaces grown on SrTiOsubstrates without terraces exhibit the two dimensional electron gas. Moreover, the conductive interfaces show a resistance upturn at low temperatures which is strongly diminished by light irradiation. These interfaces favor the persistent photoconductivity, and the enormous value of relative change in resistance, about 60 185.8%, is also obtained at 20 K. The experimental results provide fundamental insights into controlling the defects at conductive interfaces of oxides and paving a way for complex-oxides based optoelectronic devices.

摘要

通过脉冲激光沉积首次报道了通过控制与衬底表面密切相关的SrTiO₃的缺陷来形成导电的LaFeO₃/SrTiO₃界面。发现生长在没有平台的SrTiO₃衬底上的界面表现出二维电子气。此外,导电界面在低温下呈现电阻上升现象,而光照可显著降低这种现象。这些界面有利于持久光电导,并且在20 K时还获得了约60185.8%的巨大电阻相对变化值。实验结果为控制氧化物导电界面的缺陷提供了基本见解,并为基于复合氧化物的光电器件铺平了道路。

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