Le Quang T, Gungor A C, Vasyukov D, Hoffmann J, Smajic J, Zeier M
RF and Microwave Laboratory of the Federal Institute of Metrology METAS of Switzerland, 3003 Bern-Wabern, Switzerland.
Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland.
Rev Sci Instrum. 2021 Feb 1;92(2):023705. doi: 10.1063/5.0032129.
We present in this paper a new design of a capacitive calibration kit for scanning microwave microscopy (SMM). As demonstrated by finite element modelings, the produced devices are highly independent of material parameters due to their lateral configuration. The fabrication of these gold-based structures is realized by using well established clean-room techniques. SMM measurements are performed under different conditions, and all capacitive structures exhibit a strong contrast with respect to the non-capacitive background. The obtained experimental data are employed to calibrate the used SMM tips and to extract the capacitance of produced devices following a method based on the short-open-load calibration algorithm for one-port vector network analyzers. The comparison of experimental capacitance and nominal values provided by our models proves the applicability of the used calibration approach for a wide frequency range.
我们在本文中展示了一种用于扫描微波显微镜（SMM）的电容校准套件的新设计。如有限元建模所示，由于其横向配置，所制造的器件高度独立于材料参数。这些基于金的结构的制造是通过使用成熟的洁净室技术实现的。在不同条件下进行SMM测量，并且所有电容结构相对于非电容背景都表现出强烈的对比度。获得的实验数据用于校准所使用的SMM尖端，并按照基于单端口矢量网络分析仪的短路 - 开路 - 负载校准算法的方法提取所制造器件的电容。我们模型提供的实验电容与标称值的比较证明了所使用的校准方法在很宽频率范围内的适用性。
