Sun Kewei, Kawai Shigeki
Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Phys Chem Chem Phys. 2021 Mar 11;23(9):5455-5459. doi: 10.1039/d0cp05764a.
Electronic properties of molecules and carbon nanomaterials are usually affected by metal substrates. An electronic decoupling buffer layer is of importance to reveal their intrinsic properties. Here, the strength of electronic decoupling by a gold silicide buffer layer formed on Au(111) was studied using scanning tunneling microscopy/spectroscopy. The HOMO-LUMO gap of fullerene adsorbed on the buffer layer is approximately 3.0 eV, which is in between that on bare Au(111) and on a NaCl bilayer film, indicating a moderate decoupling.
分子和碳纳米材料的电子性质通常会受到金属衬底的影响。电子去耦缓冲层对于揭示它们的本征性质至关重要。在此，利用扫描隧道显微镜/能谱研究了在Au(111)上形成的硅化金缓冲层的电子去耦强度。吸附在缓冲层上的富勒烯的最高占据分子轨道-最低未占据分子轨道能隙约为3.0电子伏特，介于在裸露的Au(111)和氯化钠双层膜上的能隙之间，表明存在适度去耦。
