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利用电子全息术分析异质界面处的局域电荷——不同技术的比较研究

Analysis of Local Charges at Hetero-interfaces by Electron Holography - A Comparative Study of Different Techniques.

作者信息

Seo Jinsol, Koch Christoph T, Ryu Sangwoo, Eom Chang-Beom, Oh Sang Ho

机构信息

Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Department of Physics, Humboldt University of Berlin, Berlin, Germany.

出版信息

Ultramicroscopy. 2021 Dec;231:113236. doi: 10.1016/j.ultramic.2021.113236. Epub 2021 Feb 23.

Abstract

Interface charges confined within a few nanometers of hetero-interface can be characterized by measuring the phase shift of the transmitted beam using different electron holography techniques. However, reliable measurement of the electrostatic potential arising from the interface charges is challenging as the mean inner potential difference (ΔV) between two adjoining materials as well as local variation of the sample thickness affect the phase shift. In the present study, we show how electron holography can be used to characterize the confined charges at an oxide hetero-interface and evaluate the applicability of different techniques for this purpose. The model system chosen for this study is a LaAlO/SrTiO (LAO/STO) (111) hetero-interface featuring a two-dimensional electron gas (2DEG), where the ΔV between LAO and STO is about 2 eV, which is unignorably large and dominates the net potential variation across the interface. For transmission electron microscopy specimens prepared by focused ion beam we applied three different variants of electron holography techniques: off-axis, inline and hybrid electron holography; and compare the results obtained by these approaches in terms of the information transfer in the spatial frequency domain, and the signal-to-noise ratio of the electric field and charge density maps. To correctly assess the information pertinent to the interface-confined charges, we calculate the electrostatic potential and electric field distribution based on a charge model with taking account of the ΔV between LAO and STO and compared the calculated profiles with the experimental results after calibrating the local thickness variation across the LAO/STO interface. The results show that hybrid electron holography recovers the information across a wide range of spatial frequencies, and as a result, delivers the most reliable charge density information, albeit convoluted with the unavoidable effects arising from ΔV.

摘要

通过使用不同的电子全息技术测量透射束的相移,可以表征局限在异质界面几纳米范围内的界面电荷。然而,由于两种相邻材料之间的平均内电势差(ΔV)以及样品厚度的局部变化会影响相移,因此可靠测量由界面电荷产生的静电势具有挑战性。在本研究中,我们展示了如何使用电子全息术来表征氧化物异质界面处的局限电荷,并评估为此目的不同技术的适用性。本研究选择的模型系统是具有二维电子气(2DEG)的LaAlO/SrTiO(LAO/STO)(111)异质界面,其中LAO和STO之间的ΔV约为2 eV,这一数值相当大且主导了整个界面的净电势变化。对于通过聚焦离子束制备的透射电子显微镜样品,我们应用了三种不同的电子全息技术变体:离轴、同轴和混合电子全息术;并在空间频域的信息传递以及电场和电荷密度图的信噪比方面比较了这些方法获得的结果。为了正确评估与界面局限电荷相关的信息,我们基于电荷模型计算静电势和电场分布,同时考虑LAO和STO之间的ΔV,并在校准LAO/STO界面上的局部厚度变化后将计算出的轮廓与实验结果进行比较。结果表明,混合电子全息术能够在很宽的空间频率范围内恢复信息,因此能够提供最可靠的电荷密度信息,尽管会与由ΔV产生的不可避免的影响相卷积。

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