Ildarabadi Fereshte, Farghadan Rouhollah
Department of Physics, University of Kashan, Kashan, 87317-53153, Iran.
Phys Chem Chem Phys. 2021 Mar 18;23(10):6084-6090. doi: 10.1039/d0cp05951j.
We theoretically investigated the spin-dependent valleytronics in stanene and germanene nanoribbons, considering the electron-electron interaction and the external electric field without any magnetic exchange element. Our results showed that applying an electric field in these two-dimensional materials with a large intrinsic spin-orbit coupling can provide a versatile platform to create spin-valley currents by exploiting the edge magnetism at their zigzag edges. Generally, manipulating the electric field can generate a fully spin-valley-polarized current with a large magnitude even at room temperature. The rich and tunable spin and valley degrees of freedom can turn these structures into ideal candidates for spin-valley applications.
我们在理论上研究了锡烯和锗烯纳米带中的自旋相关谷电子学，考虑了电子 - 电子相互作用和外部电场，且未使用任何磁交换元件。我们的结果表明，在这些具有大固有自旋 - 轨道耦合的二维材料中施加电场，可以提供一个通用平台，通过利用其锯齿形边缘处的边缘磁性来产生自旋 - 谷电流。一般来说，即使在室温下，操纵电场也能产生具有大电流幅度的完全自旋 - 谷极化电流。丰富且可调节的自旋和谷自由度可使这些结构成为自旋 - 谷应用的理想候选者。
