Kovalenko A, Roučka Š, Tran T D, Rednyk S, Plašil R, Dohnal P, Glosík J
Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00 Prague, Czech Republic.
J Chem Phys. 2021 Mar 7;154(9):094301. doi: 10.1063/5.0036049.
The reactions of the O ions in the S electronic ground state with D and HD were studied in a cryogenic 22-pole radio-frequency ion trap in the temperature range of 15 K-300 K. The obtained reaction rate coefficients for both reactions are, considering the experimental errors, nearly independent of temperature and close to the values of the corresponding Langevin collisional reaction rate coefficients. The obtained branching ratios for the production of OH and OD in the reaction of O(S) with HD do not change significantly with temperature and are consistent with the results obtained at higher collisional energies by other groups. Particular attention was given to ensure that the O ions in the trap are in the ground electronic state.
在15 K至300 K的温度范围内，于低温22极射频离子阱中研究了处于S电子基态的O离子与D和HD的反应。考虑到实验误差，这两个反应获得的反应速率系数几乎与温度无关，且接近相应的朗之万碰撞反应速率系数的值。在O(S)与HD反应中生成OH和OD的分支比随温度变化不显著，且与其他研究小组在较高碰撞能量下获得的结果一致。特别注意确保阱中的O离子处于电子基态。
