用于铜铟镓硒（Cu(In,Ga)(S,Se)）薄膜太阳能电池的无废料且无镉的喷墨打印硫化锌氧（Zn(O,S)）缓冲层
Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se) Thin-Film Solar Cells.
作者信息
Chu Van Ben, Siopa Daniel, Debot Alice, Adeleye Damilola, Sood Mohit, Lomuscio Alberto, Melchiorre Michele, Guillot Jérôme, Valle Nathalie, El Adib Brahime, Rommelfangen Jonathan, Dale Phillip J
机构信息
Department of Physics and Materials Science, University of Luxembourg, 41, rue due Brill, Belvaux L-4422, Luxembourg.
Luxembourg Institute of Science and Technology, Materials Research and Technology Department, 41, rue due Brill, Belvaux L-4422, Luxembourg.
出版信息
ACS Appl Mater Interfaces. 2021 Mar 24;13(11):13009-13021. doi: 10.1021/acsami.0c16860. Epub 2021 Mar 9.
Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se) (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230 000 times less solvent and 64 000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.
采用化学浴法生长的薄膜半导体产生大量废溶剂和化学物质，随后需要进行成本高昂的废物处理。我们用一种良性的喷墨打印并退火的Zn(O,S)层取代了基于铜铟镓硫硒（CIGS）的太阳能电池中有毒的化学浴沉积CdS缓冲层，所使用的溶剂减少了230000倍，化学物质减少了64000倍。CIGS上Zn(O,S)层的润湿性和最终厚度由紫外线臭氧处理和液滴间距控制，而退火温度和气氛决定最终的化学成分和带隙。使用空气退火Zn(O,S)层的最佳太阳能电池效率为11%，这与同一批次制造的最佳传统CdS缓冲层器件相似。改善Zn(O,S)的润湿性和退火条件后，器件的最佳效率达到了13.5%，显示了这种方法的潜力。
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