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基于光子晶体的AlGaInP基红色发光二极管的增强光提取

Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals.

作者信息

Tang Xiansheng, Han Lili, Ma Ziguang, Deng Zhen, Jiang Yang, Wang Wenxin, Chen Hong, Du Chunhua, Jia Haiqiang

出版信息

Opt Express. 2021 Feb 15;29(4):5993-5999. doi: 10.1364/OE.418944.

DOI:10.1364/OE.418944
PMID:33726130
Abstract

The photonic crystal (PC) has been demonstrated to be very effective in improving the extraction efficiency of light-emitting diodes (LEDs). In this paper, high-brightness AlGaInP-based vertical LEDs (VLEDs) with surface PC (SPCLED) and embedded PC (EPCLED) were successfully fabricated. Compared with normal LED (NLED), photoluminescence intensities of SPCLED and EPCLED have been improved up to 30% and 60%, respectively. And the reflection patterns of SPCLED and EPCLED were periodic bright points array, showing the ability to control light in PC. Electroluminescent measurements show that three kinds of LEDs have similar threshold voltages. Simultaneously, the light output power (LOP) of SPCLED and EPCLED has been improved up to 24% and 11% at 200 mA, respectively, in comparison to NLEDs. But the LOP decays earlier for EPCLED due to the excessive heat production. Furthermore, it is demonstrated that the SPCLED and EPCLED luminous uniformity is better. This kind of high brightness PCLED is promising in improving the properties of all kinds of LEDs, especially mini LEDs and micro LEDs.

摘要

光子晶体(PC)已被证明在提高发光二极管(LED)的光提取效率方面非常有效。本文成功制备了具有表面光子晶体(SPCLED)和嵌入式光子晶体(EPCLED)的高亮度基于AlGaInP的垂直发光二极管(VLED)。与普通LED(NLED)相比,SPCLED和EPCLED的光致发光强度分别提高了30%和60%。并且SPCLED和EPCLED的反射图案为周期性亮点阵列,显示出在光子晶体中控制光的能力。电致发光测量表明,三种LED具有相似的阈值电压。同时,与NLED相比,SPCLED和EPCLED在200 mA时的光输出功率(LOP)分别提高了24%和11%。但由于产生过多热量,EPCLED的LOP衰减更早。此外,证明了SPCLED和EPCLED的发光均匀性更好。这种高亮度PCLED在改善各类LED的性能方面具有前景。

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