Suo Fei, Tong Jinchao, Chen Xiren, Xu Zhengji, Zhang Dao Hua
Opt Express. 2021 Mar 1;29(5):6424-6433. doi: 10.1364/OE.415987.
Photonic structures have been attracting more attention due to their ability to capture, concentrate and propagate optical energy. In this work, we propose a photon-trapping hole-array structure integrated in a nip InAsSb-GaSb heterostructure for the enhancement of the photoresponse in both near- and mid-infrared regions. The proposed symmetrical hole array can increase the photon lifetime inside the absorption layer and reduce reflection without polarization dependence. Significant enhancements in absorption and photoelectric conversion efficiency are demonstrated in dual bands for unpolarized incidence. The enhancement factors of responsivity at room temperature under zero-bias are 1.12 and 1.33 for the near- and mid-infrared, respectively, and they are increased to 1.71 and 1.79 when temperature drops to the thermoelectric cooling temperature of 220 K. Besides, such an integrated hole array also slightly improves working frequency bandwidth and response speed. This work provides a promising way for high-efficiency polarization-independent photoelectric conversion in different electromagnetic wave ranges.
光子结构因其捕获、集中和传播光能的能力而受到越来越多的关注。在这项工作中，我们提出了一种集成在n-i-p InAsSb-GaSb异质结构中的光子捕获孔阵列结构，用于增强近红外和中红外区域的光响应。所提出的对称孔阵列可以增加吸收层内的光子寿命并减少反射，且不依赖于偏振。对于非偏振入射，在双波段中展示了吸收和光电转换效率的显著增强。在零偏置下，室温下近红外和中红外的响应率增强因子分别为1.12和1.33，当温度降至220 K的热电冷却温度时，它们分别增加到1.71和1.79。此外，这种集成孔阵列还略微改善了工作频率带宽和响应速度。这项工作为不同电磁波范围内的高效偏振无关光电转换提供了一种有前景的方法。
