Jiang Zhibin, Yu Yu, Wang Yilun, Zhou De, Deng Wentao, Zhang Xinliang
Opt Express. 2021 Mar 1;29(5):7389-7397. doi: 10.1364/OE.417165.
High-power silicon-based photodiodes are key components in many silicon photonics systems, such as microwave photonics systems, an optical interconnection system with multi-level modulation formats, etc. Usually, the saturation power of the silicon-germanium (Si-Ge) photodiode is limited by the space-charge screening (SCS) effect and the feasibility of the fabrication process. Here, we propose a high saturation power Si-Ge photodiode assisted by doping regulation. Through alleviating the SCS effect of the photodiode, we successfully demonstrate an 85.7% improvement on the saturation power and a 57% improvement on the -1 dB compression photocurrent. The proposed high-power Si-Ge photodiode requires no specific fabrication process and will promote the low-cost integrated silicon photonics systems for more applications.
高功率硅基光电二极管是许多硅光子学系统中的关键组件，如微波光子学系统、具有多级调制格式的光互连系统等。通常，硅锗（Si-Ge）光电二极管的饱和功率受到空间电荷屏蔽（SCS）效应和制造工艺可行性的限制。在此，我们提出一种通过掺杂调控辅助的高饱和功率Si-Ge光电二极管。通过减轻光电二极管的SCS效应，我们成功证明饱和功率提高了85.7%，-1 dB压缩光电流提高了57%。所提出的高功率Si-Ge光电二极管不需要特定的制造工艺，将推动低成本集成硅光子学系统的更多应用。
