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光学频率下高阶拓扑光子态的近场表征

Near-Field Characterization of Higher-Order Topological Photonic States at Optical Frequencies.

作者信息

Vakulenko Anton, Kiriushechkina Svetlana, Wang Mingsong, Li Mengyao, Zhirihin Dmitry, Ni Xiang, Guddala Sriram, Korobkin Dmitry, Alù Andrea, Khanikaev Alexander B

机构信息

Department of Electrical Engineering, Grove School of Engineering, City College of the City University of New York, 140th Street and Convent Avenue, New York, NY, 10031, USA.

Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY, 10031, USA.

出版信息

Adv Mater. 2021 May;33(18):e2004376. doi: 10.1002/adma.202004376. Epub 2021 Mar 18.

Abstract

Higher-order topological insulators (HOTIs) represent a new type of topological system, supporting boundary states localized over boundaries, two or more dimensions lower than the dimensionality of the system itself. Interestingly, photonic HOTIs can possess a richer physics than their original condensed matter counterpart, supporting conventional HOTI states based on tight-binding coupling, and a new type of topological HOTI states enabled by long-range interactions. Here, a new mechanism to establish all-dielectric infrared HOTI metasurfaces exhibiting both types of HOTI states is proposed, supported by a topological transition accompanied by the emergence of topological Wannier-type polarization. Two kinds of near-field experimental studies are performed: i) the solid immersion spectroscopy and ii) near-field imaging using scattering scanning near-field optical microscopy to directly observe the topological transition and the emergence of HOTI states of two types. It is shown that the near-field profiles indicate the displacement of the Wannier center across the topological transition leading to the topological dipole polarization and emergence of the topological boundary states. The proposed all-dielectric HOTI metasurface offers a new approach to confine the optical field in micro- and nano-scale topological cavities and thus paves the way to achieve a novel nanophotonic technology.

摘要

高阶拓扑绝缘体(HOTIs)代表了一种新型拓扑系统,其支持局域在边界上的边界态,这些边界态所处维度比系统本身的维度低两维或更多维。有趣的是,光子型高阶拓扑绝缘体可能拥有比其最初的凝聚态对应物更丰富的物理性质,既支持基于紧束缚耦合的传统高阶拓扑绝缘体态,也支持由长程相互作用促成的新型拓扑高阶拓扑绝缘体态。在此,提出了一种建立同时展现这两种高阶拓扑绝缘体态的全介质红外高阶拓扑绝缘体超表面的新机制,该机制由伴随拓扑万尼尔型极化出现的拓扑转变所支持。进行了两种近场实验研究:i)固体浸没光谱学和ii)使用散射扫描近场光学显微镜的近场成像,以直接观察拓扑转变以及两种类型的高阶拓扑绝缘体态的出现。结果表明,近场分布表明了万尼尔中心在拓扑转变过程中的位移,这种位移导致了拓扑偶极极化以及拓扑边界态的出现。所提出的全介质高阶拓扑绝缘体超表面提供了一种在微米和纳米尺度的拓扑腔中限制光场的新方法,从而为实现一种新型纳米光子技术铺平了道路。

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