Liang Bor-Wei, Chang Wen-Hao, Lin Hung-Yu, Chen Po-Chun, Zhang Yi-Tang, Simbulan Kristan Bryan, Li Kai-Shin, Chen Jyun-Hong, Kuan Chieh-Hsiung, Lan Yann-Wen
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan.
Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
ACS Nano. 2021 Apr 27;15(4):6756-6764. doi: 10.1021/acsnano.0c10208. Epub 2021 Mar 18.
The integration of graphene and other two-dimensional (2D) materials with existing silicon semiconductor technology is highly desirable. This is due to the diverse advantages and potential applications brought about by the consequent miniaturization of the resulting electronic devices. Nevertheless, such devices that can operate at very high frequencies for high-speed applications are eminently preferred. In this work, we demonstrate a vertical graphene base hot-electron transistor that performs in the radio frequency regime. Our device exhibits a relatively high current density (∼200 A/cm), high common base current gain (α* ∼ 99.2%), and moderate common emitter current gain (β* ∼ 2.7) at room temperature with an intrinsic current gain cutoff frequency of around 65 GHz. Furthermore, cutoff frequency can be tuned from 54 to 65 GHz by varying the collector-base bias. We anticipate that this proposed transistor design, built by the integrated 2D material and silicon semiconductor technology, can be a potential candidate to realize extra fast radio frequency tunneling hot-carrier electronics.
将石墨烯和其他二维（2D）材料与现有的硅半导体技术集成是非常可取的。这是由于由此产生的电子器件小型化带来了多种优势和潜在应用。然而，对于高速应用而言，能够在非常高的频率下工作的此类器件是极为优选的。在这项工作中，我们展示了一种在射频范围内工作的垂直石墨烯基热电子晶体管。我们的器件在室温下表现出相对较高的电流密度（约200 A/cm）、较高的共基极电流增益（α约为99.2%）和适度的共发射极电流增益（β约为2.7），本征电流增益截止频率约为65 GHz。此外，通过改变集电极 - 基极偏置，截止频率可以从54 GHz调谐到65 GHz。我们预计，这种由集成二维材料和硅半导体技术构建的晶体管设计，可能成为实现超快速射频隧穿热载流子电子学的潜在候选者。
