Yin Yinong, Tiwari Ashutosh
Nanostructured Materials Research Laboratory, Department of Material Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.
Sci Rep. 2021 Mar 18;11(1):6324. doi: 10.1038/s41598-021-85287-2.
We are reporting the effect of thickness on the Seebeck coefficient, electrical conductivity and power factor of CaCoO thin films grown on single-crystal Sapphire (0001) substrate. Pulsed laser deposition (PLD) technique was employed to deposit CaCoO films with precisely controlled thickness values ranging from 15 to 75 nm. Structural characterization performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the growth of CaCoO on Sapphire (0001) follows the island growth-mode. It was observed that in-plane grain sizes decrease from 126 to 31 nm as the thickness of the films decreases from 75 to 15 nm. The thermoelectric power measurements showed an overall increase in the value of the Seebeck coefficient as the films' thickness decreased. The above increase in the Seebeck coefficient was accompanied with a simultaneous decrease in the electrical conductivity of the thinner films due to enhanced scattering of the charge carriers at the grain boundaries. Because of the competing mechanisms of the thickness dependence of Seebeck coefficient and electrical conductivity, the power factor of the films showed a non-monotonous functional dependence on thickness. The films with the intermediate thickness (60 nm) showed the highest power factor (~ 0.27 mW/m-K at 720 K).
我们报道了厚度对生长在单晶蓝宝石(0001)衬底上的CaCoO薄膜的塞贝克系数、电导率和功率因数的影响。采用脉冲激光沉积(PLD)技术来沉积厚度精确控制在15至75纳米范围内的CaCoO薄膜。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)进行的结构表征表明,CaCoO在蓝宝石(0001)上的生长遵循岛状生长模式。观察到,随着薄膜厚度从75纳米减小到15纳米,面内晶粒尺寸从126纳米减小到31纳米。热电功率测量表明,随着薄膜厚度减小,塞贝克系数的值总体上有所增加。上述塞贝克系数的增加伴随着较薄薄膜电导率的同时降低,这是由于电荷载流子在晶界处的散射增强所致。由于塞贝克系数和电导率对厚度的依赖存在竞争机制,薄膜的功率因数对厚度呈现非单调的函数依赖关系。中等厚度(60纳米)的薄膜表现出最高的功率因数(在720 K时约为0.27 mW/m-K)。