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集成到硅上的可扩展范德华二维PtTe层用于高效近中红外光探测

Scalable Van der Waals Two-Dimensional PtTe Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection.

作者信息

Shawkat Mashiyat Sumaiya, Hafiz Shihab Bin, Islam Molla Manjurul, Mofid Sohrab Alex, Al Mahfuz Mohammad M, Biswas Aritra, Chung Hee-Suk, Okogbue Emmanuel, Ko Tae-Jun, Chanda Debashis, Roy Tania, Ko Dong-Kyun, Jung Yeonwoong

机构信息

NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States.

Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States.

出版信息

ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15542-15550. doi: 10.1021/acsami.1c03512. Epub 2021 Mar 23.

Abstract

In recent years, there has been increasing interest in leveraging two-dimensional (2D) van der Waals (vdW) crystals for infrared (IR) photodetection, exploiting their unusual optoelectrical properties. Some 2D vdW materials with small band gap energies such as graphene and black phosphorus have been explored as stand-alone IR responsive layers in photodetectors. However, the devices incorporating these IR-sensitive 2D layers often exhibited poor performances owing to their preparation issues such as limited scalability and air instability. Herein, we explored wafer-scale 2D platinum ditelluride (PtTe) layers for near-to-mid IR photodetection by directly growing them onto silicon (Si) wafers. 2D PtTe/Si heterojunctions exhibited wavelength- and intensity-dependent high photocurrents in a spectral range of ∼1-7 μm, significantly outperforming stand-alone 2D PtTe layers. The observed superiority is attributed to their excellent Schottky junction characteristics accompanying suppressed carrier recombination as well as optical absorbance competition between 2D PtTe layers and Si. The direct and scalable growth of 2D PtTe layers was further extended to demonstrate mechanically flexible IR photodetectors.

摘要

近年来,利用二维(2D)范德华(vdW)晶体进行红外(IR)光探测并开发其独特的光电特性,受到了越来越多的关注。一些具有小带隙能量的二维vdW材料,如石墨烯和黑磷,已被探索用作光探测器中独立的红外响应层。然而,由于制备过程中存在诸如可扩展性有限和空气不稳定性等问题,包含这些红外敏感二维层的器件通常表现出较差的性能。在此,我们通过直接在硅(Si)晶圆上生长二维铂碲化物(PtTe)层,探索了用于近红外到中红外光探测的晶圆级二维PtTe层。二维PtTe/Si异质结在约1 - 7μm的光谱范围内表现出波长和强度依赖的高光电流,显著优于独立的二维PtTe层。观察到的优势归因于其优异的肖特基结特性,伴随载流子复合的抑制以及二维PtTe层和Si之间的光吸收竞争。二维PtTe层的直接且可扩展生长进一步扩展到展示机械柔性红外光探测器。

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