Gao He, Xue Haoran, Gu Zhongming, Liu Tuo, Zhu Jie, Zhang Baile
Department of Mechanical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China.
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
Nat Commun. 2021 Mar 25;12(1):1888. doi: 10.1038/s41467-021-22223-y.
Topological phases of matter are classified based on their Hermitian Hamiltonians, whose real-valued dispersions together with orthogonal eigenstates form nontrivial topology. In the recently discovered higher-order topological insulators (TIs), the bulk topology can even exhibit hierarchical features, leading to topological corner states, as demonstrated in many photonic and acoustic artificial materials. Naturally, the intrinsic loss in these artificial materials has been omitted in the topology definition, due to its non-Hermitian nature; in practice, the presence of loss is generally considered harmful to the topological corner states. Here, we report the experimental realization of a higher-order TI in an acoustic crystal, whose nontrivial topology is induced by deliberately introduced losses. With local acoustic measurements, we identify a topological bulk bandgap that is populated with gapped edge states and in-gap corner states, as the hallmark signatures of hierarchical higher-order topology. Our work establishes the non-Hermitian route to higher-order topology, and paves the way to exploring various exotic non-Hermiticity-induced topological phases.
物质的拓扑相是根据其厄米哈密顿量来分类的,其实值色散与正交本征态一起形成非平凡拓扑。在最近发现的高阶拓扑绝缘体(TIs)中,体态拓扑甚至可以表现出层次特征,从而导致拓扑角态,正如许多光子和声子人工材料中所展示的那样。自然地,由于这些人工材料的非厄米性质,其固有损耗在拓扑定义中被忽略了;在实际中,损耗的存在通常被认为对拓扑角态有害。在这里,我们报告了在声学晶体中高阶TI的实验实现,其非平凡拓扑是由故意引入的损耗诱导的。通过局部声学测量,我们识别出一个拓扑体态带隙,其中填充有带隙边缘态和带隙内的角态,作为分层高阶拓扑的标志性特征。我们的工作建立了通往高阶拓扑的非厄米途径,并为探索各种奇异的非厄米性诱导拓扑相铺平了道路。