Smart Materials Interface Laboratory, Department of Physics, Periyar University, Salem, 636 011, Tamilnadu, India.
Key Laboratory of Optoelectronic Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong Province 518060, PR China.
Environ Res. 2021 Jun;197:111079. doi: 10.1016/j.envres.2021.111079. Epub 2021 Mar 26.
In this study, 2D/2D/2D heterostructured r-GO/LTH/ZnO/g-CN nanohybrid were synthesized through hydrothermal method. The strong electrostatic interaction between the negatively charged g-CN and r-GO nanosheets with positively charged layered triple hydroxide (LTH) nanosheets are effectively influences the successful formation of heterojunction. The LTH nanosheets are well spread on the g-CN nanosheets combined with r-GO. In particular, the as prepared heterojunction shows a better photocatalytic degradation activity compared to pristine samples and the significant enhancement in the photocatalytic performance is mainly accredited to the large interfacial charge transition of photogenerated charge carriers under the visible light irradiation. Although the 2D/2D/2D heterojunction effectively hinders the charge carrier recombination resulting high photocatalytic activity with good stability. In addition, the r-GO supported LTH/ZnO/g-CN heterojunction shows high photo-stability after sequential experimental runs with no obvious change in the dye degradation process. Consequently, the role of active species was investigated over the r-GO/LTH/ZnO/g-CN heterojunction with the help of different scavengers.
在这项研究中，通过水热法合成了 2D/2D/2D 异质结构 r-GO/LTH/ZnO/g-CN 纳米杂化材料。带负电荷的 g-CN 纳米片与带正电荷的层状三羟化物（LTH）纳米片之间的强静电相互作用有效地影响了异质结的成功形成。LTH 纳米片很好地分散在 g-CN 纳米片上，并与 r-GO 结合。特别是，与原始样品相比，所制备的异质结表现出更好的光催化降解活性，光催化性能的显著增强主要归因于可见光照射下光生载流子的大界面电荷转移。尽管 2D/2D/2D 异质结有效地阻碍了电荷载流子复合，从而具有高的光催化活性和良好的稳定性。此外，r-GO 负载的 LTH/ZnO/g-CN 异质结在连续的实验运行后表现出高的光稳定性，染料降解过程没有明显变化。因此，借助不同的清除剂，在 r-GO/LTH/ZnO/g-CN 异质结上研究了活性物质的作用。
