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WS/WSe 横向超晶格中最小化晶格热导率及增强热电性能的起源

Origins of Minimized Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in WS/WSe Lateral Superlattice.

作者信息

Hu Yonglan, Yang Tie, Li Dengfeng, Ding Guangqian, Dun Chaochao, Wu Dandan, Wang Xiaotian

机构信息

School of Science, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.

School of Physical Science and Technology, Southwest University, Chongqing 400715, China.

出版信息

ACS Omega. 2021 Mar 13;6(11):7879-7886. doi: 10.1021/acsomega.1c00457. eCollection 2021 Mar 23.

Abstract

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional transition metal dichalcogenide WS based on the experimentally prepared WS/WSe lateral superlattice (LS) crystal. On the basis of density function theory combined with a Boltzmann transport equation, we show that the TE figure of merit of monolayer WS is remarkably enhanced when forming into a WS/WSe LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel () and perpendicular () to the superlattice period are highly symmetric for both - and -doped LS owing to the nearly isotropic lifetime of charger carriers. The spin-orbital effect causes a significant split of conduction band and leads to three-fold degenerate sub-bands and high density of states (DOS), which offers opportunity to obtain a high -type Seebeck coefficient (). Interestingly, the separated degenerate sub-bands and upper conduction band in monolayer WS form a remarkable stair-like DOS, yielding a higher . The hole carriers with much higher mobility than electrons reveal the high -type power factor, and the potential to be good -type TE materials with optimal exceeds 1 at 400 K in WS/WSe LS.

摘要

我们报道了一种基于实验制备的WS/WSe横向超晶格(LS)晶体来提高二维过渡金属二硫属化物WS热电(TE)性能的构型策略。基于密度泛函理论并结合玻尔兹曼输运方程,我们表明,当形成WS/WSe LS晶体时,单层WS的TE优值显著提高。这主要归因于由于非谐过程增强导致晶格热导率几乎减半。对于n型和p型LS,平行(∥)和垂直(⊥)于超晶格周期的电子输运性质高度对称,这是由于载流子的寿命近乎各向同性。自旋轨道效应导致导带显著分裂,产生三重简并子带和高态密度(DOS),这为获得高n型塞贝克系数(S)提供了机会。有趣的是,单层WS中分离的简并子带和上导带形成了显著的阶梯状DOS,产生了更高的S。空穴载流子的迁移率比电子高得多,这表明其具有高p型功率因子,并且在WS/WSe LS中,在400 K时具有成为最佳ZT超过1的良好p型TE材料的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/694d/7992166/f3c5049260fd/ao1c00457_0002.jpg

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