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强耦合外延融合CdSe纳米晶体固体中的增强载流子传输

Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids.

作者信息

Zhao Qinghua, Gouget Guillaume, Guo Jiacen, Yang Shengsong, Zhao Tianshuo, Straus Daniel B, Qian Chengyang, Oh Nuri, Wang Han, Murray Christopher B, Kagan Cherie R

出版信息

Nano Lett. 2021 Apr 14;21(7):3318-3324. doi: 10.1021/acs.nanolett.1c00860. Epub 2021 Apr 1.

Abstract

Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into CuSe nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm V s, the highest among CdSe NC solids reported. Atomic-layer deposition of a thin AlO layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm V s and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm V s with on-off ratios of 10 after doping.

摘要

强耦合、外延融合的胶体纳米晶体(NC)固体是很有前景的可溶液加工半导体,有望实现具有高载流子迁移率的光电器件。在此,我们展示了连续的固态阳离子交换反应,将外延连接的PbSe NC薄膜转化为CuSe纳米结构薄膜中间体,然后成功实现具有沿{100}面宽外延颈缩的闪锌矿结构CdSe NC固体。瞬态光电导率测量探测了纳米长度尺度上的载流子传输,显示出0.28(1) cm V s的光电导,这是报道的CdSe NC固体中最高的。薄AlO层的原子层沉积渗透并保护结构在退火过程中不熔合成多晶薄膜,并进一步将光电导提高到1.71(5) cm V s,扩散长度提高到760 nm。我们制造场效应晶体管以研究微米长度尺度上的载流子传输,并在掺杂后实现了35(3) cm V s的高电子迁移率和10的开关比。

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