Zhao Qinghua, Gouget Guillaume, Guo Jiacen, Yang Shengsong, Zhao Tianshuo, Straus Daniel B, Qian Chengyang, Oh Nuri, Wang Han, Murray Christopher B, Kagan Cherie R
Nano Lett. 2021 Apr 14;21(7):3318-3324. doi: 10.1021/acs.nanolett.1c00860. Epub 2021 Apr 1.
Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into CuSe nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm V s, the highest among CdSe NC solids reported. Atomic-layer deposition of a thin AlO layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm V s and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm V s with on-off ratios of 10 after doping.
强耦合、外延融合的胶体纳米晶体(NC)固体是很有前景的可溶液加工半导体,有望实现具有高载流子迁移率的光电器件。在此,我们展示了连续的固态阳离子交换反应,将外延连接的PbSe NC薄膜转化为CuSe纳米结构薄膜中间体,然后成功实现具有沿{100}面宽外延颈缩的闪锌矿结构CdSe NC固体。瞬态光电导率测量探测了纳米长度尺度上的载流子传输,显示出0.28(1) cm V s的光电导,这是报道的CdSe NC固体中最高的。薄AlO层的原子层沉积渗透并保护结构在退火过程中不熔合成多晶薄膜,并进一步将光电导提高到1.71(5) cm V s,扩散长度提高到760 nm。我们制造场效应晶体管以研究微米长度尺度上的载流子传输,并在掺杂后实现了35(3) cm V s的高电子迁移率和10的开关比。