Mousavi MirRazi, Abolhassani Reza, Hosseini Mohammad, Akbarnejad Elaheh, Mojallal Mohammad Hossein, Ghasemi Shahnaz, Mohajerzadeh Shams, Sanaee Zeinab
Nano-fabricated Energy Devices Lab, School of Electrical and Computer Eng., University of Tehran, Tehran, Iran.
Thin film and Nano-Electronic Lab, School of Electrical and Computer Eng., University of Tehran, Tehran, Iran.
Nanotechnology. 2021 Apr 26;32(28). doi: 10.1088/1361-6528/abf456.
SnOis considered as one of the high specific capacity anode materials for Lithium-ion batteries. However, the low electrical conductivity of SnOlimits its applications. This manuscript reports a simple and efficient approach for the synthesis of Sb-doped SnOnanowires (NWs) core and carbon shell structure which effectively enhances the electrical conductivity and electrochemical performance of SnOnanostructures. Sb doping was performed during the vapor-liquid-solid synthesis of SnONWs in a horizontal furnace. Subsequently, carbon nanolayer was coated on the NWs using the DC Plasma Enhanced Chemical Vapor Deposition approach. The carbon-coated shell improves the Solid-Electrolyte Interphase stability and alleviates the volume expansion of the anode electrode during charging and discharging. The Sb-doped SnOcore carbon shell anode showed the superior specific capacity of 585 mAhgafter 100 cycles at the current density of 100 mA g, compared to the pure SnONWs electrode. The cycle stability evaluation revealed that the discharge capacity of pure SnONWs and Sb doped SnONWs electrodes were dropped to 52 and 152 mAh gafter100th cycles. The process of Sb doping and carbon nano shielding of SnOnanostructures is proposed for noticeable improvement of the anode performance for SnObased materials.
SnO被认为是锂离子电池的高比容量负极材料之一。然而,SnO的低电导率限制了其应用。本论文报道了一种简单有效的方法来合成具有Sb掺杂的SnO纳米线(NWs)核壳结构,该结构有效地提高了SnO纳米结构的电导率和电化学性能。在水平炉中通过气-液-固法合成SnO NWs的过程中进行了Sb掺杂。随后,使用直流等离子体增强化学气相沉积法在NWs上包覆碳纳米层。碳包覆壳提高了固体电解质界面的稳定性,并减轻了负极在充放电过程中的体积膨胀。与纯SnO NWs电极相比,Sb掺杂的SnO核壳负极在100 mA g的电流密度下循环100次后表现出585 mAh g的优异比容量。循环稳定性评估表明,纯SnO NWs和Sb掺杂的SnO NWs电极在第100次循环后的放电容量分别降至52和152 mAh g。提出了对SnO纳米结构进行Sb掺杂和碳纳米屏蔽的工艺,以显著提高基于SnO材料的负极性能。