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衬底诱导应变对LaSrCoO薄膜结构和磁性的影响

Substrate-Induced Strain Effect on Structural and Magnetic Properties of LaSrCoO Films.

作者信息

Sánchez-Pérez Miriam, Andrés Juan Pedro, González Juan Antonio, López Antón Ricardo, López de la Torre Marco Antonio, Juan Dura Oscar

机构信息

Department of Applied Physics, University of Castilla-La Mancha, 13071 Ciudad Real, Spain.

Instituto Regional de Investigación Científica Aplicada (IRICA), University of Castilla-La Mancha, 13071 Ciudad Real, Spain.

出版信息

Nanomaterials (Basel). 2021 Mar 18;11(3):781. doi: 10.3390/nano11030781.

Abstract

We present a detailed study about the substrate-induced strain and thickness effects on the structure and magnetic properties of LaSrCoO films. The in-plane tensile or compressive strain imposed by four different substrates configures an in-plane or out-of-plane easy axis, respectively. The presence of a soft magnetic phase at the interface is also conditioned by the type of strain. The obtained results are discussed in terms of the different anisotropies that participate and control the final magnetic behavior. The relevance of these results lies in the feasibility of LaSrCoO in memory applications and spintronic devices.

摘要

我们展示了一项关于衬底诱导应变和厚度对LaSrCoO薄膜结构及磁性能影响的详细研究。由四种不同衬底施加的面内拉伸或压缩应变分别构成了面内或面外易轴。界面处软磁相的存在也受应变类型的制约。依据参与并控制最终磁行为的不同各向异性对所得结果进行了讨论。这些结果的重要性在于LaSrCoO在存储器应用和自旋电子器件中的可行性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5f/8003147/3e48ed3ca111/nanomaterials-11-00781-g001.jpg

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