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具有三个独立铌层的深亚微米超导量子干涉器件电路的制造工艺

Fabrication Process for Deep Submicron SQUID Circuits with Three Independent Niobium Layers.

作者信息

Wolter Silke, Linek Julian, Altmann Josepha, Weimann Thomas, Bechstein Sylke, Kleiner Reinhold, Beyer Jörn, Koelle Dieter, Kieler Oliver

机构信息

Fachbereich Quantenelektronik, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany.

Center for Quantum Science (CQ) and LISA+, Physikalisches Institut, Universität Tübingen, 72076 Tübingen, Germany.

出版信息

Micromachines (Basel). 2021 Mar 24;12(4):350. doi: 10.3390/mi12040350.

Abstract

We present a fabrication technology for nanoscale superconducting quantum interference devices (SQUIDs) with overdamped superconductor-normal metal-superconductor (SNS) trilayer Nb/HfTi/Nb Josephson junctions. A combination of electron-beam lithography with chemical-mechanical polishing and magnetron sputtering on thermally oxidized Si wafers is used to produce direct current SQUIDs with 100-nm-lateral dimensions for Nb lines and junctions. We extended the process from originally two to three independent Nb layers. This extension offers the possibility to realize superconducting vias to all Nb layers without the HfTi barrier, and hence to increase the density and complexity of circuit structures. We present results on the yield of this process and measurements of SQUID characteristics.

摘要

我们展示了一种用于制造具有过阻尼超导-正常金属-超导(SNS)三层Nb/HfTi/Nb约瑟夫森结的纳米级超导量子干涉器件(SQUID)的技术。在热氧化硅晶片上,结合电子束光刻、化学机械抛光和磁控溅射,用于制造Nb线和结的横向尺寸为100纳米的直流SQUID。我们将该工艺从最初的两个独立Nb层扩展到了三个。这种扩展提供了在没有HfTi势垒的情况下实现连接所有Nb层的超导通孔的可能性,从而提高了电路结构的密度和复杂性。我们展示了该工艺的成品率结果以及SQUID特性的测量结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d818/8064365/a67d8f090eee/micromachines-12-00350-g001.jpg

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