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铜掺杂氧化锌量子点电子结构的计算研究。

Computational studies of the electronic structure of copper-doped ZnO quantum dots.

作者信息

Volnianska O

机构信息

Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw, Poland.

出版信息

J Chem Phys. 2021 Mar 28;154(12):124710. doi: 10.1063/5.0039522.

DOI:10.1063/5.0039522
PMID:33810646
Abstract

Copper-doped ZnO quantum dots (QDs) have attracted substantial interest. The electronic structure and optical and magnetic properties of Cu(d)-, Cu(d)-, and Cu(d)-doped ZnO QDs with sizes up to 1.5 nm are investigated using the GGA+U approximation, with the +U corrections applied to d (Zn), p(O), and d(Cu) orbitals. Taking +Us parameters, as optimized in previous bulk calculations, we obtain the correct band structure of ZnO QDs. Both the description of electronic structure and thermodynamic charge state transitions of Cu in ZnO QDs agree with the results of bulk calculations due to the strong localization of Cu defect energy levels. Atomic displacements around Cu are induced by strong Jahn-Teller distortion and affect Kohn-Sham energies and thermodynamic transition levels. The average bond length of Cu-O and the defect structure are crucial factors influencing the electronic properties of Cu in ZnO QDs. The analysis of the optical properties of Cu in ZnO QDs is reported. The GGA+U results, compared with the available experimental data, support Dingle's model [Phys. Rev. Lett. 23, 579 (1969)], in which the structured green luminescence observed in bulk and nanocrystals originates from the [(Cu, hole) → Cu] transition. We also examine the magnetic interaction between the copper pair for two charge states: 0 and +2, and four positions relative to the center of QDs. Ferromagnetic interaction between ions is obtained for every investigated configuration. The magnitude of ferromagnetism increases for positive charge defects due to the strong hybridization of the d(Cu) and p(O) states.

摘要

铜掺杂的ZnO量子点(QDs)引起了广泛关注。使用GGA+U近似方法研究了尺寸达1.5 nm的Cu(d)-、Cu(d)-和Cu(d)-掺杂的ZnO量子点的电子结构、光学和磁学性质,其中+U校正应用于d(Zn)、p(O)和d(Cu)轨道。采用先前体相计算中优化的+U参数,我们得到了ZnO量子点的正确能带结构。由于Cu缺陷能级的强局域性,ZnO量子点中Cu的电子结构描述和热力学电荷态转变均与体相计算结果一致。Cu周围的原子位移由强烈的 Jahn-Teller 畸变引起,并影响Kohn-Sham能量和热力学转变能级。Cu-O的平均键长和缺陷结构是影响ZnO量子点中Cu电子性质的关键因素。报道了对ZnO量子点中Cu光学性质的分析。GGA+U结果与现有实验数据相比,支持了Dingle模型[《物理评论快报》23, 579 (1969)],其中在体相和纳米晶体中观察到的结构化绿色发光源于[(Cu,空穴)→Cu]跃迁。我们还研究了铜对在两种电荷态(0和+2)以及相对于量子点中心的四个位置的磁相互作用。对于每个研究的构型,都获得了离子间的铁磁相互作用。由于d(Cu)和p(O)态的强杂化,正电荷缺陷的铁磁相互作用强度增加。

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