Babadi Aein S, Tang-Kong Robert, McIntyre Paul C
Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States.
J Phys Chem Lett. 2021 Apr 15;12(14):3625-3632. doi: 10.1021/acs.jpclett.1c00115. Epub 2021 Apr 7.
In situ monitoring of gas phase composition reveals the link between the changing gas phase chemistry during atomic layer deposition (ALD) half-cycle reactions and the electronic conductivity of ALD-TiO thin films. Dimethylamine ((CH)NH, DMA) is probed as the main product of both the TDMAT and water vapor half-reactions during the TDMAT/HO ALD process. In-plane electronic transport characterization of the ALD grown films demonstrates that the presence of DMA, a reducing agent, in the ALD chamber throughout each half-cycle is correlated with both an increase in the films' electronic conductivity, and observation of titanium in the 3+ oxidation state by ex situ X-ray photoelectron spectroscopy analysis of the films. DMA annealing of as-grown TiO films in the ALD chamber produces a similar effect on their electronic characteristics, indicating the importance of DMA-induced oxygen deficiency of ALD-TiO in dictating the electronic conductivity of as-grown films.
气相成分的原位监测揭示了原子层沉积（ALD）半周期反应过程中气相化学变化与ALD-TiO薄膜电子电导率之间的联系。在TDMAT/H₂O ALD过程中，二甲胺（(CH₃)₂NH，DMA）被探测为TDMAT和水蒸气半反应的主要产物。对ALD生长薄膜的面内电子输运特性进行表征表明，在每个半周期内，ALD腔室中作为还原剂的DMA的存在与薄膜电子电导率的增加以及通过对薄膜进行非原位X射线光电子能谱分析观察到的3+氧化态钛相关。在ALD腔室中对生长态TiO薄膜进行DMA退火处理对其电子特性产生类似影响，这表明DMA诱导的ALD-TiO氧缺陷在决定生长态薄膜的电子电导率方面具有重要作用。
