Lee Hyun-Mo, Kim Yoon-Seo, Rim You Seung, Park Jin-Seong
Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
ACS Appl Mater Interfaces. 2021 Apr 21;13(15):17827-17834. doi: 10.1021/acsami.1c02593. Epub 2021 Apr 12.
Indium-gallium-zinc oxide- and zinc oxynitride-based heterojunction phototransistors were successfully demonstrated to control the persistent photoconduction (PPC) effect and be also responded sensitively at the range from visible to near-infrared. ZnON plays a key role in extending the spectral response at various frequencies of operation. The devices show significantly different photoresponse and photorecovery characteristics depending on the number of stacked layers of IGZO and ZnON. After negative bias and illumination stress was applied to the devices for 1 h, tandem-structure-based phototransistors recovered remarkably better than single-component IGZO devices. We suggest that the improvements to photoresponse and photorecovery result from the presence of potential wells between two IGZO layers and the energy band alignment of the tandem structure.
基于铟镓锌氧化物和氮氧化锌的异质结光电晶体管已成功证明可控制持续光电导（PPC）效应，并且在从可见光到近红外的范围内也有灵敏响应。ZnON在扩展不同工作频率下的光谱响应方面起着关键作用。这些器件根据IGZO和ZnON的堆叠层数显示出显著不同的光响应和光恢复特性。在对器件施加1小时的负偏压和光照应力后，基于串联结构的光电晶体管的恢复明显优于单组分IGZO器件。我们认为，光响应和光恢复的改善源于两个IGZO层之间势阱的存在以及串联结构的能带排列。
