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由周边偏心图形反转刺激诱发的图形视网膜电图和视觉诱发电位地形图

Pattern ERGs and VEP topography evoked by lateral eccentric pattern reversal stimulation.

作者信息

Skrandies W, Leipert K P

机构信息

Max-Planck-Institute for Physiological and Clinical Research, Bad Nauheim, F.R.G.

出版信息

Int J Neurosci. 1988 Mar;39(1-2):137-46. doi: 10.3109/00207458808985698.

DOI:10.3109/00207458808985698
PMID:3384565
Abstract

In ten healthy subjects we recorded simultaneously pattern-ERGs and multichannel VEPs evoked by checkerboard reversal stimuli presented in the center, and at three different locations on the nasal and temporal retina. In the near periphery significantly larger pattern-ERG amplitudes were found for the nasal retina. Farther out in the periphery this effect reversed, and stimuli presented to the temporal retina yielded larger pattern-ERG amplitudes. Component latencies showed also differences with larger latencies for nasal than temporal retinal stimuli in the near periphery. In addition, pattern-ERG amplitudes increased with check size while peak latencies decreased. Retinal stimulus location had a significant influence on the VEP topography reflected by potential distributions lateralized over occipital scalp areas contralateral to the hemiretina stimulated. There were no differences between VEP activity evoked by nasal or temporal retinal stimuli. The results relate to differences in local retinal organization reflected by the distribution of photoreceptors and other neural elements across the retina as well as to functional differences in visual information processing between different retinal areas.

摘要

在10名健康受试者中,我们同时记录了由棋盘格反转刺激诱发的图形视网膜电图(pattern-ERG)和多通道视觉诱发电位(VEP),刺激呈现于中央以及鼻侧和颞侧视网膜的三个不同位置。在近周边区域,鼻侧视网膜的图形视网膜电图振幅显著更大。在更外围区域,这种效应发生反转,呈现于颞侧视网膜的刺激产生更大的图形视网膜电图振幅。成分潜伏期也存在差异,在近周边区域,鼻侧视网膜刺激的潜伏期比颞侧视网膜刺激的潜伏期更长。此外,图形视网膜电图振幅随方格大小增加而增大,而峰值潜伏期则减小。视网膜刺激位置对视觉诱发电位地形图有显著影响,这通过在受刺激半侧视网膜对侧枕部头皮区域的电位分布偏侧化得以体现。鼻侧或颞侧视网膜刺激诱发的视觉诱发电位活动之间没有差异。这些结果与视网膜局部组织的差异有关,这种差异由光感受器和视网膜其他神经元件的分布所反映,也与不同视网膜区域之间视觉信息处理的功能差异有关。

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