Caylan Omer Refet, Cambaz Buke Goknur
Micro and Nanotechnology Graduate Program, Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06510, Ankara, Turkey.
National Nanotechnology Research Center, UNAM, Bilkent University, 06800, Ankara, Turkey.
Sci Rep. 2021 Apr 15;11(1):8247. doi: 10.1038/s41598-021-87660-7.
Chemical vapor deposition is a promising technique to produce MoC crystals with large area, controlled thickness, and reduced defect density. Typically, liquid Cu is used as a catalyst substrate; however, its high melting temperature (1085 °C) prompted research groups to search for alternatives. In this study, we report the synthesis of large-area thin MoC crystals at lower temperatures using liquid In, which is also advantageous with respect to the transfer process due to its facile etching. SEM, EDS, Raman spectroscopy, XPS, and XRD studies show that hexagonal MoC crystals, which are orthorhombic, grow along the [100] direction together with an amorphous carbon thin film on In. The growth mechanism is examined and discussed in detail, and a model is proposed. AFM studies agree well with the proposed model, showing that the vertical thickness of the MoC crystals decreases inversely with the thickness of In for a given reaction time.
化学气相沉积是一种很有前景的技术，可用于制备大面积、厚度可控且缺陷密度降低的碳化钼晶体。通常，液态铜用作催化剂衬底；然而，其较高的熔点（1085 °C）促使研究团队寻找替代物。在本研究中，我们报告了使用液态铟在较低温度下合成大面积薄碳化钼晶体的方法，由于其易于蚀刻，在转移过程中也具有优势。扫描电子显微镜（SEM）、能谱仪（EDS）、拉曼光谱、X射线光电子能谱（XPS）和X射线衍射（XRD）研究表明，正交晶系的六方碳化钼晶体沿[100]方向生长，同时在铟上形成非晶碳薄膜。详细研究并讨论了生长机制，并提出了一个模型。原子力显微镜（AFM）研究与所提出的模型非常吻合，表明在给定反应时间下，碳化钼晶体的垂直厚度与铟的厚度成反比减小。
