MacArthur Katherine E, Clement Antoine, Heggen Marc, Dunin-Borkowski Rafal E
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany.
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany; Ecole Nationale Supérieure des Mines de Nancy, Campus Artem, BP 14234, 92 rue du Sergent Blandan, 54042 Nancy cedex, France.
Ultramicroscopy. 2021 Dec;231:113270. doi: 10.1016/j.ultramic.2021.113270. Epub 2021 Apr 6.
Computer simulations are used to assess the influence of a 20-nm-thick SiN membrane on the quantification of atomic-resolution annular dark-field (ADF) scanning transmission electron microscopy images of Pt nanoparticles. The discussions include the effect of different nanoparticle/membrane arrangements, accelerating voltage, nanoparticle thickness and the presence of adjacent atomic columns on the accuracy with which the number of Pt atoms in each atom column can be counted. The results, which are based on the use of ADF scattering cross-sections, show that an accuracy of better than a single atom is attainable at 200 and 300 kV. At 80kV, the scattering in a typical SiN membrane is sufficiently strong that the best possible atom counting accuracy is reduced to +/- 2 atoms. The implications of the work for quantitative studies of Pt nanoparticles imaged through SiN membranes are discussed.
计算机模拟用于评估20纳米厚的氮化硅（SiN）膜对铂（Pt）纳米颗粒原子分辨率环形暗场（ADF）扫描透射电子显微镜图像定量分析的影响。讨论内容包括不同纳米颗粒/膜排列、加速电压、纳米颗粒厚度以及相邻原子列的存在对每个原子列中Pt原子数量计数准确性的影响。基于ADF散射截面的计算结果表明，在200千伏和300千伏时，计数精度可优于单个原子。在80千伏时，典型SiN膜中的散射足够强，使得最佳原子计数精度降至±2个原子。文中讨论了该研究结果对通过SiN膜成像的Pt纳米颗粒定量研究的意义。
