An Jiadai, Dai Xianying, Feng Lansheng, Zheng Jieming
School of Microelectronics, Xidian University, Xi'an, 710071, China.
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Xidian University, Xi'an, 710071, China.
Sci Rep. 2021 Apr 23;11(1):8877. doi: 10.1038/s41598-021-87554-8.
We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN film, while the flow field in the HT-MOCVD reactor is closely related to the process parameters, which will affect the uniformity of the film. An independently developed conceptual HT-MOCVD reactor was established for the AlN growth to carry out the CFD simulation. To evaluate the role of the parameters systematically and efficiently on the growth uniformity, the process parameters based on CFD simulation were analyzed using orthogonal test design. The advantages of the range, matrix and variance methods were considered and the results were analyzed comprehensively and the optimal process parameters were obtained as follows, susceptor rotational speed 400 rpm, operating pressure 40 Torr, gas flow rate 50 slm, substrate temperature 1550 K.
我们基于正交试验设计，通过计算流体力学（CFD）模拟研究了用于氮化铝（AlN）生长的高温金属有机化学气相沉积（HT-MOCVD）数值模型的工艺参数。据信，高温生长条件有利于提高AlN薄膜的生长效率和结晶质量，而HT-MOCVD反应器内的流场与工艺参数密切相关，这会影响薄膜的均匀性。为了进行AlN生长，建立了一个自主研发的概念性HT-MOCVD反应器以开展CFD模拟。为了系统且高效地评估这些参数对生长均匀性的作用，采用正交试验设计对基于CFD模拟的工艺参数进行了分析。综合考虑了极差法、矩阵法和方差法的优点并对结果进行了全面分析，得到的最优工艺参数如下：基座转速400转/分钟、操作压力40托、气体流速50标准升/分钟、衬底温度1550开尔文。
