Gong Ruiling, Azrak Edy, Castro Celia, Duguay Sébastien, Pareige Philippe, Roca I Cabarrocas Pere, Chen Wanghua
School of Physical Science and Technology, Ningbo University, Ningbo 315211, People's Republic of China.
GPM, Université et INSA de Rouen, CNRS, Normandie Université, Saint Etienne du Rouvray, F-76800, France.
Nanotechnology. 2021 Jun 3;32(34). doi: 10.1088/1361-6528/abfc72.
Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full process consists of three steps: (1) SnOnanoparticle (NP) reduction in a hydrogen plasma to produce Sn catalyst; (2) a-Ge:H deposition at 120 °C and (3) annealing. GeSn alloys with rich morphologies such as discrete nanocrystals (NCs), random, and straight NWs were successfully synthesized by changing process conditions. We show that annealing under Ar plasma favors the elaboration of straight GeSn NWs in contrast to the conventional random GeSn NWs obtained when annealing is performed under a Hatmosphere. Interestingly, GeSn in the form of discrete NCs can be fabricated during the deposition of a-Ge:H at 180 °C. Even more, the synthesis of out-of-plane GeSn NWs has been demonstrated by reversing the deposition sequence of SnONPs and a-Ge:H layer.
将锗与锡合金化是实现与硅兼容的光电子学的一种很有前景的方法。在此，借助金属锡液滴通过氢化非晶锗（a-Ge:H）层的纳米晶化实现了锗锡纳米线（NWs）。整个过程包括三个步骤：（1）在氢等离子体中还原氧化锡纳米颗粒（NP）以制备锡催化剂；（2）在120°C下沉积a-Ge:H以及（3）退火。通过改变工艺条件成功合成了具有丰富形态的锗锡合金，如离散纳米晶体（NCs）、随机的和直的纳米线。我们表明，与在氢气气氛下退火时获得的传统随机锗锡纳米线相比，在氩等离子体下退火有利于制备直的锗锡纳米线。有趣的是，在180°C沉积a-Ge:H的过程中可以制造出离散纳米晶体形式的锗锡。甚至，通过颠倒氧化锡纳米颗粒和a-Ge:H层的沉积顺序，已经证明了面外锗锡纳米线的合成。
