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梯度铟含量超晶格对发黄光的InGaN/GaN量子阱光学和结构特性的影响

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells.

作者信息

Li Xuan, Liu Jianping, Su Xujun, Huang Siyi, Tian Aiqin, Zhou Wei, Jiang Lingrong, Ikeda Masao, Yang Hui

机构信息

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

出版信息

Materials (Basel). 2021 Apr 9;14(8):1877. doi: 10.3390/ma14081877.

DOI:10.3390/ma14081877
PMID:33918874
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8069205/
Abstract

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

摘要

我们利用渐变铟含量超晶格提高了在自支撑GaN衬底上生长的高铟组分InGaN/GaN多量子阱（MQW）的材料质量。我们发现，通过采用渐变铟含量超晶格结构，发射黄光的InGaN/GaN MQW的光谱半高宽从181 meV降低到160 meV，非辐射复合寿命从13 ns增加到44 ns。此外，如TEM衍射图所示，渐变铟含量超晶格可以减轻高铟组分MQW中的应变弛豫。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/cdc54279c416/materials-14-01877-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/ad0fb24d3708/materials-14-01877-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/2bdbe1266da4/materials-14-01877-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/21100ceba92a/materials-14-01877-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/6be3ca075ab4/materials-14-01877-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/2fc0a675b0fb/materials-14-01877-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/132312661b3e/materials-14-01877-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/eb6ce72065c9/materials-14-01877-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/cdc54279c416/materials-14-01877-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/ad0fb24d3708/materials-14-01877-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/2bdbe1266da4/materials-14-01877-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/21100ceba92a/materials-14-01877-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/6be3ca075ab4/materials-14-01877-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/2fc0a675b0fb/materials-14-01877-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/132312661b3e/materials-14-01877-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/eb6ce72065c9/materials-14-01877-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740a/8069205/cdc54279c416/materials-14-01877-g008.jpg

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本文引用的文献

1
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.
Opt Express. 2012 Nov 5;20(23):A812-21.