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将核独立化学位移与积分电流密度强度相关联。

Relating nucleus independent chemical shifts with integrated current density strengths.

作者信息

Radenković Slavko, Đorđević Slađana

机构信息

Faculty of Science, University of Kragujevac, P. O. Box 60, 34000 Kragujevac, Serbia.

出版信息

Phys Chem Chem Phys. 2021 May 19;23(19):11240-11250. doi: 10.1039/d1cp00784j.

DOI:10.1039/d1cp00784j
PMID:33949527
Abstract

Indices based on the nucleus independent chemical shift (NICS) are the most frequently used in analysis of magnetic aromaticity. The magnetically induced current density, on the other hand, is a key concept in defining magnetic aromaticity. The integrated current strength (current strength susceptibility) was found to be a very useful tool in aromaticity studies. There is widely accepted notion that the properly chosen NICS-based index can provide information on the current density strength and direction in a molecule of interest. In this work, a detailed numerical testing of the relationship between the integrated bond current strength and the most employed NICS indices was performed for a set of 43 monocyclic aromatic molecules. Based on the statistical data analysis, the relationship between the bond current strength and its π and σ electron components, on one side, and the isotropic NICS (NICSiso and NICSπ,iso) and zz-component of the NICS tensor (NICSzz and NICSπ,zz), on the other side, was examined. It was found that between the NICSπ,zz(1) and π-electron bond current strenghts there is very good linear correlation. Quite surprisingly, it was revealed that the NICSiso(1) and NICSzz(1) are not correlated with the π electron bond current strengths. On the other hand, a reasonably good linear correlation was found between the NICSzz(1) and total bond current strengths.

摘要

基于核独立化学位移(NICS)的指标是磁性芳香性分析中最常用的。另一方面,磁诱导电流密度是定义磁性芳香性的关键概念。发现积分电流强度(电流强度磁化率)是芳香性研究中非常有用的工具。人们普遍认为,适当选择的基于NICS的指标可以提供有关感兴趣分子中电流密度强度和方向的信息。在这项工作中,对一组43个单环芳香分子进行了积分键电流强度与最常用的NICS指标之间关系的详细数值测试。基于统计数据分析,研究了键电流强度与其π和σ电子成分之间的关系,以及各向同性NICS(NICSiso和NICSπ,iso)与NICS张量的zz分量(NICSzz和NICSπ,zz)之间的关系。发现NICSπ,zz(1)与π电子键电流强度之间存在非常好的线性相关性。相当令人惊讶的是,发现NICSiso(1)和NICSzz(1)与π电子键电流强度不相关。另一方面,发现NICSzz(1)与总键电流强度之间存在合理良好的线性相关性。

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