Perez-Piskunow Pablo M, Roche Stephan
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain and ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain.
Phys Rev Lett. 2021 Apr 23;126(16):167701. doi: 10.1103/PhysRevLett.126.167701.
We report on the possibility of detecting hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multiterminal device with ferromagnetic contacts near the top surface, local spin features of the chiral edge modes are unveiled. We find local spin polarization at the hinges that inverts the sign between the top and bottom surfaces. At the opposite edge, the topological state with inverted spin polarization propagates in the reverse direction. A large resistance switch between forward and backward propagating states is obtained, driven by the matching between the spin polarized hinges and the ferromagnetic contacts. This feature is general to the ferromagnetic, antiferromagnetic, and canted antiferromagnetic phases, and enables the design of spin-sensitive devices, with the possibility of reversing the hinge spin polarization of the currents.
我们报告了通过电阻测量来检测磁性拓扑绝缘体中铰链自旋极化的可能性。通过将磁性拓扑绝缘体的三维模型应用于顶表面附近具有铁磁接触的多端器件中,揭示了手性边缘模式的局部自旋特征。我们发现在铰链处存在局部自旋极化,其在顶表面和底表面之间反转符号。在相对的边缘,自旋极化反转的拓扑态沿相反方向传播。由自旋极化铰链与铁磁接触之间的匹配驱动,可获得正向和反向传播状态之间的大电阻切换。此特征对于铁磁、反铁磁和倾斜反铁磁相是通用的,并且能够设计自旋敏感器件,有可能反转电流的铰链自旋极化。