Kozak Dmitry A, Tyndall Nathan F, Pruessner Marcel W, Rabinovich William S, Stievater Todd H
Opt Express. 2021 May 10;29(10):15443-15451. doi: 10.1364/OE.420687.
Germanium-on-silicon (GOS) represents the leading platform for foundry-based long-wave infrared photonic integrated circuits (LWIR PICs), due to its CMOS compatibility and absence of oxides. We describe ring resonance (Q-factors between 2×10 and 1×10) and thermo-optic tunability in germanium-on-silicon waveguides throughout the long-wave-infrared. The ring resonances are characterized by Q-factors and couplings that agree with measurements of propagation loss (as low as 6 dB/cm) and simulations and are enabled by broadband edge coupling (12dB/facet over a 3 dB bandwidth of over 4 microns). We demonstrate the furthest into the infrared that ring resonators have been measured and show the potential of this platform for photonic integration and waveguide spectroscopy at wavelengths from 7 microns to beyond 11 microns.
硅基锗（GOS）由于其与CMOS的兼容性以及无氧化物特性，成为基于代工的长波红外光子集成电路（LWIR PIC）的领先平台。我们描述了长波红外波段硅基锗波导中的环形谐振（品质因数在2×10至1×10之间）和热光可调性。环形谐振的特征在于品质因数和耦合，这与传播损耗（低至6 dB/cm）的测量结果以及模拟结果相符，并且通过宽带边缘耦合（在超过4微米的3 dB带宽上为12 dB/面）实现。我们展示了已测量环形谐振器的最远红外波段，并展示了该平台在7微米至超过11微米波长的光子集成和波导光谱方面的潜力。
